Visualization of horizontally-aligned single-walled carbon nanotube growth with13C/12C isotopes

Hiroki Ago, Naoki Ishigami, Naoki Yoshihara, Kenta Imamoto, Seiji Akita, Ken Ichi Ikeda, Masaharu Tsuji, Tatsuya Ikuta, Koji Takahashi

研究成果: ジャーナルへの寄稿学術誌査読

34 被引用数 (Scopus)


Horizontally aligned growth of single-walled carbon nanotubes (SWNTs) on single-crystal surfaces has attracted great interest in terms of nanoelectronic applications, but their growth mechanism is not fully understood. We report on the 13C/12C isotope-labeled growth of SWNTs on a sapphire surface to visualize their growth process. Switching carbon feedstock from 13CH4 to 12CH4 during SWNT growth induces a gradient distribution of the carbon isotopes along the tube axis. From the Raman mapping analysis, we succeeded to observe the gradual change in the isotope distribution of individual SWNTs. The results indicate the base-growth mode for the horizontally aligned SWNTs, which suggests that nanotube-sapphire interaction is essential to alignment. This method offers a unique technique to analyze the nanotube growth mechanism and kinetics.

ジャーナルJournal of Physical Chemistry C
出版ステータス出版済み - 2月 14 2008

!!!All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • エネルギー(全般)
  • 物理化学および理論化学
  • 表面、皮膜および薄膜


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