Vertically aligned growth of ZnO nanonails by nanoparticle-assisted pulsed-laser ablation deposition

R. Q. Guo, J. Nishimura, M. Ueda, M. Higashihata, Daisuke Nakamura, T. Okada

研究成果: ジャーナルへの寄稿学術誌査読

56 被引用数 (Scopus)

抄録

Vertically aligned ZnO nanonails have been successfully grown on annealed sapphire substrates at comparatively high gas pressure using catalyst-free nanoparticle-assisted pulsed-laser ablation deposition (NAPLD). The growth behavior of the ZnO nanonails has been investigated by variation of the ablation time, which we name 'isolated particle initiated growth' and a three-step growth mechanism for ZnO nanonails is proposed. SEM analysis reveals that each of the uniquely shaped ZnO nanonails consists of a so-called hexagonal rod-shaped 'root' and a slightly tapered 'stem'. The well-aligned ZnO nanonails exhibit a strong ultraviolet (UV) emission at around 390 nm under room temperature and only negligible visible emission, which indicates that there is a very low concentration of oxygen vacancies in the highly oriented ZnO nanonails. The as-synthesized nanonail arrays on sapphire substrate could offer novel opportunities for both fundamental research and technological applications.

本文言語英語
ページ(範囲)141-144
ページ数4
ジャーナルApplied Physics A: Materials Science and Processing
89
1
DOI
出版ステータス出版済み - 10月 1 2007

!!!All Science Journal Classification (ASJC) codes

  • 材料科学(全般)
  • 物理学および天文学(その他)

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