TY - GEN
T1 - Ultralow-temperature catalyst-induced-crystallization of SiGe on plastic for flexible electronics
AU - Sadoh, T.
AU - Park, J. H.
AU - Kurosawa, M.
AU - Miyao, M.
PY - 2014
Y1 - 2014
N2 - Development of a low-temperature (≤250°C) formation technique of orientation-controlled large-grain (<10 μm) SiGe on insulator is essential to realize flexible electronics, where various advanced devices are integrated on flexible plastic substrates (softening temperature: ~300°C). This is because SiGe provides higher carrier mobility and superior optical properties compared with Si, as well as epitaxial template of various functional materials. In line with this, we have been developing metal-induced crystallization of SiGe. This achieves selectively (100)- or (111)-oriented large-grain (≥20 μm) SiGe at low temperatures (~250°C) [1-4]. Present paper reviews our recent progress in this novel growth technique.
AB - Development of a low-temperature (≤250°C) formation technique of orientation-controlled large-grain (<10 μm) SiGe on insulator is essential to realize flexible electronics, where various advanced devices are integrated on flexible plastic substrates (softening temperature: ~300°C). This is because SiGe provides higher carrier mobility and superior optical properties compared with Si, as well as epitaxial template of various functional materials. In line with this, we have been developing metal-induced crystallization of SiGe. This achieves selectively (100)- or (111)-oriented large-grain (≥20 μm) SiGe at low temperatures (~250°C) [1-4]. Present paper reviews our recent progress in this novel growth technique.
UR - https://www.scopus.com/pages/publications/84906663942
UR - https://www.scopus.com/pages/publications/84906663942#tab=citedBy
U2 - 10.1109/ISTDM.2014.6874633
DO - 10.1109/ISTDM.2014.6874633
M3 - Conference contribution
AN - SCOPUS:84906663942
SN - 9781479954285
T3 - 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014
SP - 47
EP - 48
BT - 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014
PB - IEEE Computer Society
T2 - 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014
Y2 - 2 June 2014 through 4 June 2014
ER -