True Breakdown Voltage and Overvoltage Margin of GaN Power HEMTs in Hard Switching

Joseph P. Kozak; Ruizhe Zhang; Qihao Song; Jingcun Liu; Wataru Saito; Yuhao Zhang

doi:10.1109/LED.2021.3063360

True Breakdown Voltage and Overvoltage Margin of GaN Power HEMTs in Hard Switching

Joseph P. Kozak, Ruizhe Zhang, Qihao Song, Jingcun Liu, Wataru Saito, Yuhao Zhang

研究成果: ジャーナルへの寄稿 › 学術誌 › 査読

43 被引用数 (Scopus)

抄録

This work studies the dynamic breakdown voltage (BV) and overvoltage margin of a 650-V-rated commercial GaN power HEMT in hard switching. The dynamic BV measured in the hard switching circuits is over 1.4 kV, being 450 V higher than the static BV measured in the quasi-static I-V sweep. The device can survive at least 1 million hard-switching overvoltage pulses with 1.33 kV peak overvoltage (95% dynamic BV). Recoverable device parametric shifts are observed after the 1-million pulses, featuring small reductions in threshold voltage and on-resistance. These shifts are different from the ones after the hard-switching pulses without overvoltage and are attributable to the trapping of the holes produced in impact ionization. These results suggest that the BV and overvoltage margin of GaN HEMTs in practical power switching can be significantly underestimated using the static BV.

本文言語	英語
論文番号	9367212
ページ（範囲）	505-508
ページ数	4
ジャーナル	IEEE Electron Device Letters
巻	42
号	4
DOI	https://doi.org/10.1109/LED.2021.3063360
出版ステータス	出版済み - 4月 2021

!!!All Science Journal Classification (ASJC) codes

電子材料、光学材料、および磁性材料
電子工学および電気工学

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title = "True Breakdown Voltage and Overvoltage Margin of GaN Power HEMTs in Hard Switching",

abstract = "This work studies the dynamic breakdown voltage (BV) and overvoltage margin of a 650-V-rated commercial GaN power HEMT in hard switching. The dynamic BV measured in the hard switching circuits is over 1.4 kV, being 450 V higher than the static BV measured in the quasi-static I-V sweep. The device can survive at least 1 million hard-switching overvoltage pulses with 1.33 kV peak overvoltage (95% dynamic BV). Recoverable device parametric shifts are observed after the 1-million pulses, featuring small reductions in threshold voltage and on-resistance. These shifts are different from the ones after the hard-switching pulses without overvoltage and are attributable to the trapping of the holes produced in impact ionization. These results suggest that the BV and overvoltage margin of GaN HEMTs in practical power switching can be significantly underestimated using the static BV.",

author = "Kozak, {Joseph P.} and Ruizhe Zhang and Qihao Song and Jingcun Liu and Wataru Saito and Yuhao Zhang",

note = "Funding Information: Manuscript received February 22, 2021; accepted February 28, 2021. Date of publication March 2, 2021; date of current version March 24, 2021. This work was supported in part by the PowerAmerica, Department of Energy. The review of this letter was arranged by Editor T. Egawa. (Corresponding author: Yuhao Zhang.) Joseph P. Kozak, Ruizhe Zhang, Qihao Song, Jingcun Liu, and Yuhao Zhang are with the Center for Power Electronics Systems, Virginia Polytechnic Institute and State University, Blacksburg, VA 24060 USA (e-mail: yhzhang@vt.edu). Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",

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AU - Saito, Wataru

AU - Zhang, Yuhao

N1 - Funding Information: Manuscript received February 22, 2021; accepted February 28, 2021. Date of publication March 2, 2021; date of current version March 24, 2021. This work was supported in part by the PowerAmerica, Department of Energy. The review of this letter was arranged by Editor T. Egawa. (Corresponding author: Yuhao Zhang.) Joseph P. Kozak, Ruizhe Zhang, Qihao Song, Jingcun Liu, and Yuhao Zhang are with the Center for Power Electronics Systems, Virginia Polytechnic Institute and State University, Blacksburg, VA 24060 USA (e-mail: yhzhang@vt.edu). Publisher Copyright: © 1980-2012 IEEE.

PY - 2021/4

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N2 - This work studies the dynamic breakdown voltage (BV) and overvoltage margin of a 650-V-rated commercial GaN power HEMT in hard switching. The dynamic BV measured in the hard switching circuits is over 1.4 kV, being 450 V higher than the static BV measured in the quasi-static I-V sweep. The device can survive at least 1 million hard-switching overvoltage pulses with 1.33 kV peak overvoltage (95% dynamic BV). Recoverable device parametric shifts are observed after the 1-million pulses, featuring small reductions in threshold voltage and on-resistance. These shifts are different from the ones after the hard-switching pulses without overvoltage and are attributable to the trapping of the holes produced in impact ionization. These results suggest that the BV and overvoltage margin of GaN HEMTs in practical power switching can be significantly underestimated using the static BV.

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True Breakdown Voltage and Overvoltage Margin of GaN Power HEMTs in Hard Switching

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