True Breakdown Voltage and Overvoltage Margin of GaN Power HEMTs in Hard Switching

Joseph P. Kozak, Ruizhe Zhang, Qihao Song, Jingcun Liu, Wataru Saito, Yuhao Zhang

    研究成果: ジャーナルへの寄稿学術誌査読

    53 被引用数 (Scopus)

    抄録

    This work studies the dynamic breakdown voltage (BV) and overvoltage margin of a 650-V-rated commercial GaN power HEMT in hard switching. The dynamic BV measured in the hard switching circuits is over 1.4 kV, being 450 V higher than the static BV measured in the quasi-static I-V sweep. The device can survive at least 1 million hard-switching overvoltage pulses with 1.33 kV peak overvoltage (95% dynamic BV). Recoverable device parametric shifts are observed after the 1-million pulses, featuring small reductions in threshold voltage and on-resistance. These shifts are different from the ones after the hard-switching pulses without overvoltage and are attributable to the trapping of the holes produced in impact ionization. These results suggest that the BV and overvoltage margin of GaN HEMTs in practical power switching can be significantly underestimated using the static BV.

    本文言語英語
    論文番号9367212
    ページ(範囲)505-508
    ページ数4
    ジャーナルIEEE Electron Device Letters
    42
    4
    DOI
    出版ステータス出版済み - 4月 2021

    !!!All Science Journal Classification (ASJC) codes

    • 電子材料、光学材料、および磁性材料
    • 電子工学および電気工学

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