Transient reflecting grating study of ion-implanted semiconductors

A. Harata; H. Nishimura; Q. Shen; T. Tanaka; T. Sawada

doi:10.1051/jp4:1994738

Transient reflecting grating study of ion-implanted semiconductors

A. Harata, H. Nishimura, Q. Shen, T. Tanaka, T. Sawada

研究成果: ジャーナルへの寄稿 › 会議記事 › 査読

抄録

Surface modification of Si(100) wafers induced by argon-ion implantation (ion energy, 300keV; dose, 10¹¹-10¹⁷ atoms/cm²) was investigated using a transient reflecting grating technique. Effects of the implantation on velocity, intensity and onset time of surface acoustic waves (SAW) were discussed accompanying the acoustic anisotropy. SAW velocity dispersion was also examined for one of the lightly ion-implanted sample (dose, 10¹¹ atoms/cm²).

本文言語	英語
ページ（範囲）	C7-159-162
ジャーナル	Journal De Physique
巻	4
号	7
DOI	https://doi.org/10.1051/jp4:1994738
出版ステータス	出版済み - 1994
外部発表	はい
イベント	Proceedings of the 8th International Topical Meeting on Photoacoustic and Photothermal Phenomena - Guadeloupe, Fr 継続期間: 1月 22 1994 → 1月 25 1994

!!!All Science Journal Classification (ASJC) codes

物理学および天文学（全般）

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abstract = "Surface modification of Si(100) wafers induced by argon-ion implantation (ion energy, 300keV; dose, 1011-1017 atoms/cm2) was investigated using a transient reflecting grating technique. Effects of the implantation on velocity, intensity and onset time of surface acoustic waves (SAW) were discussed accompanying the acoustic anisotropy. SAW velocity dispersion was also examined for one of the lightly ion-implanted sample (dose, 1011 atoms/cm2).",

author = "A. Harata and H. Nishimura and Q. Shen and T. Tanaka and T. Sawada",

year = "1994",

doi = "10.1051/jp4:1994738",

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journal = "Journal De Physique",

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note = "Proceedings of the 8th International Topical Meeting on Photoacoustic and Photothermal Phenomena ; Conference date: 22-01-1994 Through 25-01-1994",

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T1 - Transient reflecting grating study of ion-implanted semiconductors

AU - Harata, A.

AU - Nishimura, H.

AU - Shen, Q.

AU - Tanaka, T.

AU - Sawada, T.

PY - 1994

Y1 - 1994

N2 - Surface modification of Si(100) wafers induced by argon-ion implantation (ion energy, 300keV; dose, 1011-1017 atoms/cm2) was investigated using a transient reflecting grating technique. Effects of the implantation on velocity, intensity and onset time of surface acoustic waves (SAW) were discussed accompanying the acoustic anisotropy. SAW velocity dispersion was also examined for one of the lightly ion-implanted sample (dose, 1011 atoms/cm2).

AB - Surface modification of Si(100) wafers induced by argon-ion implantation (ion energy, 300keV; dose, 1011-1017 atoms/cm2) was investigated using a transient reflecting grating technique. Effects of the implantation on velocity, intensity and onset time of surface acoustic waves (SAW) were discussed accompanying the acoustic anisotropy. SAW velocity dispersion was also examined for one of the lightly ion-implanted sample (dose, 1011 atoms/cm2).

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U2 - 10.1051/jp4:1994738

DO - 10.1051/jp4:1994738

M3 - Conference article

AN - SCOPUS:0028478554

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SP - C7-159-162

JO - Journal De Physique

JF - Journal De Physique

IS - 7

T2 - Proceedings of the 8th International Topical Meeting on Photoacoustic and Photothermal Phenomena

Y2 - 22 January 1994 through 25 January 1994

ER -

Transient reflecting grating study of ion-implanted semiconductors

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!!!All Science Journal Classification (ASJC) codes

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