Trade-off between thickness and temperature ramping rate of GaN buffer layer studied for high quality GaN growth on GaAs (1 1 1)A substrate

Engineering

• Buffer Layer 100%
• Temperature 33%
• Thickness 33%
• High Temperature 33%
• Low-Temperature 33%
• High Quality 25%
• Crystalline Quality 25%
• Substrates 16%
• Heating 8%
• Epitaxial Film 8%
• Crystallite 8%
• Correlation 8%

Physics

• Crystallization 41%
• Temperature 33%
• High Temperature 33%
• Growth 25%
• Substrates 16%
• Agglomeration 16%
• Volume 8%
• Heating 8%
• Region 8%
• Parameter 8%
• Correlation 8%

Material Science

• Buffer Layer 100%
• Crystallization 41%
• Gallium Arsenide 33%
• Crystallite 8%
• Epitaxial Layer 8%