Three-dimensional angle-resolved photoemission study of bulk SiGe single crystals

Kazutoshi Takahashi, Yuki Umeda, Masaki Imamura, Marina Takaira, Yoshifumi Ikoma, Yasutomo Arai

研究成果: ジャーナルへの寄稿学術誌査読

抄録

The composition- and structure-dependent electronic band structure of SiGe alloys facilitates a rich variety of its application in various fields. In this study, we performed high-resolution core-level and angle-resolved photoemission spectroscopy (ARPES) of unstrained SiGe single crystals with the (001) surface. Thermally cleaned surfaces of the single crystals of SiGe alloys exhibited double domain (2 × 1) reconstruction, wherein the asymmetric dimer was composed of Ge atoms, and Si atoms were located below the subsurface region. The compositional dependence of three valence bands and their constant energy contours were clearly resolved by three-dimensional ARPES measurements using the high-intensity synchrotron radiation. The valence bands of unstrained SiGe alloys could be well described by the composition-based interpolation of the band parameters of pristine Si and Ge crystals.

本文言語英語
論文番号041114
ジャーナルAPL Materials
11
4
DOI
出版ステータス出版済み - 4月 1 2023

!!!All Science Journal Classification (ASJC) codes

  • 材料科学(全般)
  • 工学(全般)

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