Thermoelectric properties of ZnO doped with the group 13 elements

Toshiki Tsubota, Michitaka Ohtaki, Koichi Eguchi, Hiromichi Arai

    研究成果: 会議への寄与タイプ学会誌査読

    20 被引用数 (Scopus)

    抄録

    Investigation on thermoelectric properties of ZnO doped with the group 13 elements revealed that addition of M2O3 (M = Al, Ga, In) to ZnO all increased the electrical conductivity significantly, whereas the absolute values of the Seebeck coefficient moderately decreased. The increase in the electrical conductivity was smaller for the dopant with the heavier element, being in good agreement with a decrease in the carrier mobility. However, the thermal conductivity was also suppressed by Ga and In doping, particularly at the lower temperature region. Even with the smaller power factor values, the figure of merit of (Zn0.98M0.02)O (M = Ga or In) was equal to that of the Al-doped one up to ca. 600 °C, owing to the suppression of the thermal conductivity.

    本文言語英語
    ページ240-243
    ページ数4
    出版ステータス出版済み - 1997
    イベントProceedings of the 1997 16th International Conference on Thermoelectrics, ICT'97 - Dresden, Ger
    継続期間: 8月 26 19978月 29 1997

    その他

    その他Proceedings of the 1997 16th International Conference on Thermoelectrics, ICT'97
    CityDresden, Ger
    Period8/26/978/29/97

    !!!All Science Journal Classification (ASJC) codes

    • 工学一般

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