TY - JOUR
T1 - Thermodynamic analysis of AlGaN HVPE growth
AU - Koukitu, Akinori
AU - Kikuchi, Jun
AU - Kangawa, Yoshihiro
AU - Kumagai, Yoshinao
N1 - Funding Information:
This work was carried out under the 21st Century Center of Excellence (COE) program of the Future Nano-Materials Research and Education Project, which is financially supported by the Ministry of Education, Science, Sports, Culture and Technology, at Tokyo University of Agriculture & Technology, and was partially supported by a Grant-in-Aid for Science Research (No. 15360004) from the Ministry of Education, Science, Sports, Culture and Technology.
PY - 2005/7/15
Y1 - 2005/7/15
N2 - A thermodynamic analysis of the hydride vapor phase epitaxy (HVPE) of AlGaN using AlCl3 and GaCl as group III precursors is described. For a range of values on the input ratio, temperature, and the partial pressure of hydrogen in the carrier gas, we calculated the equilibrium partial pressures and the driving force for AlN and GaN deposition in AlGaN. As a result, we show that controllable AlGaN HVPE is possible under a low partial pressure of hydrogen (<10% hydrogen in carrier gas).
AB - A thermodynamic analysis of the hydride vapor phase epitaxy (HVPE) of AlGaN using AlCl3 and GaCl as group III precursors is described. For a range of values on the input ratio, temperature, and the partial pressure of hydrogen in the carrier gas, we calculated the equilibrium partial pressures and the driving force for AlN and GaN deposition in AlGaN. As a result, we show that controllable AlGaN HVPE is possible under a low partial pressure of hydrogen (<10% hydrogen in carrier gas).
UR - https://www.scopus.com/pages/publications/20744455260
UR - https://www.scopus.com/pages/publications/20744455260#tab=citedBy
U2 - 10.1016/j.jcrysgro.2005.03.010
DO - 10.1016/j.jcrysgro.2005.03.010
M3 - Conference article
AN - SCOPUS:20744455260
SN - 0022-0248
VL - 281
SP - 47
EP - 54
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 1
T2 - The Internbational Workshop on Bulk Nitride Semiconductors III
Y2 - 4 September 2004 through 9 September 2004
ER -