The Study of Dislocation Propagation in Si Wafer during IGBT High Thermal Budget Process

Jiuyang Yuan; Yoshiji Miyamura; Satoshi Nakano; Wataru Saito; Shin Ichi Nishizawa

doi:10.1109/EDTM55494.2023.10103031

The Study of Dislocation Propagation in Si Wafer during IGBT High Thermal Budget Process

Jiuyang Yuan, Yoshiji Miyamura, Satoshi Nakano, Wataru Saito, Shin Ichi Nishizawa

新エネルギー力学部門

研究成果: 書籍/レポートタイプへの寄稿 › 会議への寄与

2 被引用数 (Scopus)

抄録

There are several thermal budget processes for Si-IGBT fabrication, which sometimes cause dislocation propagation. The dislocation propagation depends on temperature and time of the process. In this paper, we analyzed the dislocation propagation in Si wafer during Si-IGBT fabrication process. We also calculated the dislocation density during diffusion process with several temperatures and times, and we confirmed that the lower temperature process causes the smaller dislocation propagation which may carry out the good device performance.

本文言語	英語
ホスト出版物のタイトル	7th IEEE Electron Devices Technology and Manufacturing Conference
ホスト出版物のサブタイトル	Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023
出版社	Institute of Electrical and Electronics Engineers Inc.
ISBN（電子版）	9798350332520
DOI	https://doi.org/10.1109/EDTM55494.2023.10103031
出版ステータス	出版済み - 2023
イベント	7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023 - Seoul, 韓国継続期間: 3月 7 2023 → 3月 10 2023

出版物シリーズ

名前	7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023

会議

会議	7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023
国/地域	韓国
City	Seoul
Period	3/7/23 → 3/10/23

!!!All Science Journal Classification (ASJC) codes

安全性、リスク、信頼性、品質管理
電子材料、光学材料、および磁性材料
器械工学
電子工学および電気工学

文献へのアクセス

10.1109/EDTM55494.2023.10103031

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引用スタイル

Yuan, J., Miyamura, Y., Nakano, S., Saito, W., & Nishizawa, S. I. (2023). The Study of Dislocation Propagation in Si Wafer during IGBT High Thermal Budget Process. In 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023 (7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM55494.2023.10103031

The Study of Dislocation Propagation in Si Wafer during IGBT High Thermal Budget Process. / Yuan, Jiuyang; Miyamura, Yoshiji; Nakano, Satoshi その他.
7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023. Institute of Electrical and Electronics Engineers Inc., 2023. (7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023).

研究成果: 書籍/レポートタイプへの寄稿 › 会議への寄与

Yuan, J, Miyamura, Y, Nakano, S, Saito, W & Nishizawa, SI 2023, The Study of Dislocation Propagation in Si Wafer during IGBT High Thermal Budget Process. in 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023. 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023, Institute of Electrical and Electronics Engineers Inc., 7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023, Seoul, 韓国, 3/7/23. https://doi.org/10.1109/EDTM55494.2023.10103031

Yuan J, Miyamura Y, Nakano S, Saito W , Nishizawa SI. The Study of Dislocation Propagation in Si Wafer during IGBT High Thermal Budget Process. In 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023. Institute of Electrical and Electronics Engineers Inc. 2023. (7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023). doi: 10.1109/EDTM55494.2023.10103031

Yuan, Jiuyang ; Miyamura, Yoshiji ; Nakano, Satoshi その他. / The Study of Dislocation Propagation in Si Wafer during IGBT High Thermal Budget Process. 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023. Institute of Electrical and Electronics Engineers Inc., 2023. (7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023).

@inproceedings{71d2562e4bfc4b3ca62b4c78991df749,

title = "The Study of Dislocation Propagation in Si Wafer during IGBT High Thermal Budget Process",

abstract = "There are several thermal budget processes for Si-IGBT fabrication, which sometimes cause dislocation propagation. The dislocation propagation depends on temperature and time of the process. In this paper, we analyzed the dislocation propagation in Si wafer during Si-IGBT fabrication process. We also calculated the dislocation density during diffusion process with several temperatures and times, and we confirmed that the lower temperature process causes the smaller dislocation propagation which may carry out the good device performance.",

author = "Jiuyang Yuan and Yoshiji Miyamura and Satoshi Nakano and Wataru Saito and Nishizawa, {Shin Ichi}",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023 ; Conference date: 07-03-2023 Through 10-03-2023",

year = "2023",

doi = "10.1109/EDTM55494.2023.10103031",

language = "English",

series = "7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "7th IEEE Electron Devices Technology and Manufacturing Conference",

address = "United States",

}

TY - GEN

T1 - The Study of Dislocation Propagation in Si Wafer during IGBT High Thermal Budget Process

AU - Yuan, Jiuyang

AU - Miyamura, Yoshiji

AU - Nakano, Satoshi

AU - Saito, Wataru

AU - Nishizawa, Shin Ichi

PY - 2023

Y1 - 2023

N2 - There are several thermal budget processes for Si-IGBT fabrication, which sometimes cause dislocation propagation. The dislocation propagation depends on temperature and time of the process. In this paper, we analyzed the dislocation propagation in Si wafer during Si-IGBT fabrication process. We also calculated the dislocation density during diffusion process with several temperatures and times, and we confirmed that the lower temperature process causes the smaller dislocation propagation which may carry out the good device performance.

AB - There are several thermal budget processes for Si-IGBT fabrication, which sometimes cause dislocation propagation. The dislocation propagation depends on temperature and time of the process. In this paper, we analyzed the dislocation propagation in Si wafer during Si-IGBT fabrication process. We also calculated the dislocation density during diffusion process with several temperatures and times, and we confirmed that the lower temperature process causes the smaller dislocation propagation which may carry out the good device performance.

UR - http://www.scopus.com/inward/record.url?scp=85158145213&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85158145213&partnerID=8YFLogxK

U2 - 10.1109/EDTM55494.2023.10103031

DO - 10.1109/EDTM55494.2023.10103031

M3 - Conference contribution

AN - SCOPUS:85158145213

T3 - 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023

BT - 7th IEEE Electron Devices Technology and Manufacturing Conference

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023

Y2 - 7 March 2023 through 10 March 2023

ER -

The Study of Dislocation Propagation in Si Wafer during IGBT High Thermal Budget Process

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!!!All Science Journal Classification (ASJC) codes

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