The effect of the H2/(H2 + Ar) flow-rate ratio on hydrogenated amorphous carbon films grown using Ar/H2/C7H8 plasma chemical vapor deposition

Taojun Fang, Kenji Yamaki, Kazunori Koga, Daisuke Yamashita, Hyunwoong Seo, Naho Itagaki, Masaharu Shiratani, Kosuke Takenaka, Yuichi Setsuhara

研究成果: ジャーナルへの寄稿学術誌査読

4 被引用数 (Scopus)

抄録

To produce hydrogenated amorphous carbon (a-C:H) films with high mass density at a high deposition rate and low substrate bias voltage, we deposited these films on a Si substrate by plasma chemical vapor deposition, using toluene as a source compound and varying the gas flow-rate ratio of H2/(H2 + Ar). By decreasing the gas flow-rate ratio from 55% to 11%, the hydrogen content in the films decreased, and the density of sp3 carbon atoms in the films increased, whereas their surface roughness increased. At the gas flow-rate ratio of 11%, we produced a-C:H films with a high bulk density of 1830 kg/m3 at a high deposition rate of 81.1 nm/min.

本文言語英語
ページ(範囲)891-898
ページ数8
ジャーナルThin Solid Films
660
DOI
出版ステータス出版済み - 8月 30 2018

!!!All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 表面および界面
  • 表面、皮膜および薄膜
  • 金属および合金
  • 材料化学

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