TY - GEN
T1 - The Benefits of Using SiN as a Buried Oxide in Germanium-On-Insulator Substrate
AU - Duangchan, Sethavut
AU - Yamamoto, Keisuke
AU - Wang, Dong
AU - Nakashima, Hiroshi
AU - Baba, Akiyoshi
N1 - Publisher Copyright:
© 2020 IEEE.
PY - 2020/4
Y1 - 2020/4
N2 - This research aims to show the benefits of using SiN as a buried-oxide (BOX) in germanium-on-insulator (GOI) substrate. The substrate is fabricated by using a direct bonding method with a smart-cut technology. Using SiN as a BOX layer instead of conventinal SiO2 yields the tensile strain of the substrate is 1.3%-2% approximately, which affects to enhance the mobility of the Ge-based device.
AB - This research aims to show the benefits of using SiN as a buried-oxide (BOX) in germanium-on-insulator (GOI) substrate. The substrate is fabricated by using a direct bonding method with a smart-cut technology. Using SiN as a BOX layer instead of conventinal SiO2 yields the tensile strain of the substrate is 1.3%-2% approximately, which affects to enhance the mobility of the Ge-based device.
UR - http://www.scopus.com/inward/record.url?scp=85091978944&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85091978944&partnerID=8YFLogxK
U2 - 10.1109/EDTM47692.2020.9117986
DO - 10.1109/EDTM47692.2020.9117986
M3 - Conference contribution
AN - SCOPUS:85091978944
T3 - 4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Proceedings
BT - 4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 4th Electron Devices Technology and Manufacturing Conference, EDTM 2020
Y2 - 6 April 2020 through 21 April 2020
ER -