TY - JOUR
T1 - Temperature gradient effect on SiC epitaxy in liquid phase
AU - Khan, Muhammad Nasir
AU - Nishizawa, Shin Ichi
AU - Bahng, Wook
AU - Arai, Kazuo
N1 - Copyright:
Copyright 2005 Elsevier Science B.V., Amsterdam. All rights reserved.
PY - 2000
Y1 - 2000
N2 - Epitaxial growth of 6H-SiC was carried out on 6H-SiC Acheson seed crystals in the silicon melt using closed carbon crucible. The growth was carried out in the temperature range 1500-1700 °C. The geometry was specific one, such that epitaxial layer growth occurred simultaneously on both faces of seed crystal under similar growth conditions. We have measured the growth rate and studied the surface morphology of these grown layers. The temperature gradient within the melt seems to play a dominant role in the growth mechanism in liquid phase and also results in a better surface morphology of the grown layers.
AB - Epitaxial growth of 6H-SiC was carried out on 6H-SiC Acheson seed crystals in the silicon melt using closed carbon crucible. The growth was carried out in the temperature range 1500-1700 °C. The geometry was specific one, such that epitaxial layer growth occurred simultaneously on both faces of seed crystal under similar growth conditions. We have measured the growth rate and studied the surface morphology of these grown layers. The temperature gradient within the melt seems to play a dominant role in the growth mechanism in liquid phase and also results in a better surface morphology of the grown layers.
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M3 - Conference article
AN - SCOPUS:12944281816
SN - 0255-5476
VL - 338
SP - I/-
JO - Materials Science Forum
JF - Materials Science Forum
T2 - ICSCRM '99: The International Conference on Silicon Carbide and Related Materials
Y2 - 10 October 1999 through 15 October 1999
ER -