Temperature gradient effect on SiC epitaxy in liquid phase

Muhammad Nasir Khan, Shin Ichi Nishizawa, Wook Bahng, Kazuo Arai

研究成果: ジャーナルへの寄稿会議記事査読


Epitaxial growth of 6H-SiC was carried out on 6H-SiC Acheson seed crystals in the silicon melt using closed carbon crucible. The growth was carried out in the temperature range 1500-1700 °C. The geometry was specific one, such that epitaxial layer growth occurred simultaneously on both faces of seed crystal under similar growth conditions. We have measured the growth rate and studied the surface morphology of these grown layers. The temperature gradient within the melt seems to play a dominant role in the growth mechanism in liquid phase and also results in a better surface morphology of the grown layers.

ジャーナルMaterials Science Forum
出版ステータス出版済み - 2000
イベントICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA
継続期間: 10月 10 199910月 15 1999

!!!All Science Journal Classification (ASJC) codes

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学


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