Epitaxial growth of 6H-SiC was carried out on 6H-SiC Acheson seed crystals in the silicon melt using closed carbon crucible. The growth was carried out in the temperature range 1500-1700 °C. The geometry was specific one, such that epitaxial layer growth occurred simultaneously on both faces of seed crystal under similar growth conditions. We have measured the growth rate and studied the surface morphology of these grown layers. The temperature gradient within the melt seems to play a dominant role in the growth mechanism in liquid phase and also results in a better surface morphology of the grown layers.
|ジャーナル||Materials Science Forum|
|出版ステータス||出版済み - 2000|
|イベント||ICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA|
継続期間: 10月 10 1999 → 10月 15 1999
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