Temperature dependence of Eu 4f states in EuPd2Si2: Bulk-sensitive high-resolution photoemission study

Kojiro Mimura, Yukihiro Taguchi, Shuichi Fukuda, Akihiro Mitsuda, Junji Sakurai, Kouichi Ichikawa, Osamu Aita

研究成果: ジャーナルへの寄稿学術誌査読

8 被引用数 (Scopus)

抄録

Eu 4f states in EuPd2Si2 have been investigated by bulk-sensitive high-resolution photoemission spectroscopy at temperatures from 20 to 300K. A bulk Eu2+ 4f component is definitely distinguished from two surface components. As the temperature is increasing, the spectral intensity of bulk Eu2+ drastically increases around 150K, while that of bulk Eu3+ decreases. The bulk Eu3+ 4f component is shifted by 0.2eV from 100 to 200K. The changes associated with the valence transition of EuPd2Si2 are thus successfully observed in the temperature-dependent photoemission spectra.

本文言語英語
ページ(範囲)292-294
ページ数3
ジャーナルPhysica B: Condensed Matter
351
3-4
DOI
出版ステータス出版済み - 9月 15 2004
外部発表はい

!!!All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学

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