Tapered-surface etching of GaAs utilizing low-energy ion bombardment effect

Dong Ju Bai; Akiyoshi Baba; Atsushi Kenjo; Taizoh Sadoh; Hiroshi Nakashima; Hiroshi Mori; Toshio Tsurushima

Tapered-surface etching of GaAs utilizing low-energy ion bombardment effect

Dong Ju Bai, Akiyoshi Baba, Atsushi Kenjo, Taizoh Sadoh, Hiroshi Nakashima, Hiroshi Mori, Toshio Tsurushima

電子デバイス工学

研究成果: ジャーナルへの寄稿 › 学術誌 › 査読

抄録

A technique for fabricating tapered-surface structures on GaAs crystals is demonstrated. GaAs crystals are bombarded with low-energy (5 keV) Ar ⁺ ions, and the partially masked surfaces are etched with an aqueous solution of FeCl ₃-HCl. Effect of the ion bombardmentenhanced etching is utilized to proceed a high-rate lateral etching under the mask, and to reveal a surface with a taper angle of 10-45°, depending on the ion dose.

本文言語	英語
ページ（範囲）	225-228
ページ数	4
ジャーナル	Research Reports on Information Science and Electrical Engineering of Kyushu University
巻	2
号	2
出版ステータス	出版済み - 9月 1 1997

!!!All Science Journal Classification (ASJC) codes

コンピュータサイエンス（全般）
電子工学および電気工学

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引用スタイル

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title = "Tapered-surface etching of GaAs utilizing low-energy ion bombardment effect",

abstract = "A technique for fabricating tapered-surface structures on GaAs crystals is demonstrated. GaAs crystals are bombarded with low-energy (5 keV) Ar + ions, and the partially masked surfaces are etched with an aqueous solution of FeCl 3-HCl. Effect of the ion bombardmentenhanced etching is utilized to proceed a high-rate lateral etching under the mask, and to reveal a surface with a taper angle of 10-45°, depending on the ion dose.",

author = "Bai, {Dong Ju} and Akiyoshi Baba and Atsushi Kenjo and Taizoh Sadoh and Hiroshi Nakashima and Hiroshi Mori and Toshio Tsurushima",

year = "1997",

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language = "English",

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T1 - Tapered-surface etching of GaAs utilizing low-energy ion bombardment effect

AU - Bai, Dong Ju

AU - Baba, Akiyoshi

AU - Kenjo, Atsushi

AU - Sadoh, Taizoh

AU - Nakashima, Hiroshi

AU - Mori, Hiroshi

AU - Tsurushima, Toshio

PY - 1997/9/1

Y1 - 1997/9/1

N2 - A technique for fabricating tapered-surface structures on GaAs crystals is demonstrated. GaAs crystals are bombarded with low-energy (5 keV) Ar + ions, and the partially masked surfaces are etched with an aqueous solution of FeCl 3-HCl. Effect of the ion bombardmentenhanced etching is utilized to proceed a high-rate lateral etching under the mask, and to reveal a surface with a taper angle of 10-45°, depending on the ion dose.

AB - A technique for fabricating tapered-surface structures on GaAs crystals is demonstrated. GaAs crystals are bombarded with low-energy (5 keV) Ar + ions, and the partially masked surfaces are etched with an aqueous solution of FeCl 3-HCl. Effect of the ion bombardmentenhanced etching is utilized to proceed a high-rate lateral etching under the mask, and to reveal a surface with a taper angle of 10-45°, depending on the ion dose.

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M3 - Article

AN - SCOPUS:0031223837

SN - 1342-3819

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SP - 225

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JO - Research Reports on Information Science and Electrical Engineering of Kyushu University

JF - Research Reports on Information Science and Electrical Engineering of Kyushu University

IS - 2

ER -

Tapered-surface etching of GaAs utilizing low-energy ion bombardment effect

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!!!All Science Journal Classification (ASJC) codes

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