Switching kinetics of pulsed laser deposited epitaxial PZT films

M. Yamazato, A. M. Grishin, Y. Yamagata, T. Ikegami, K. Ebihara

研究成果: ジャーナルへの寄稿会議記事査読

3 被引用数 (Scopus)


We have fabricated epitaxial PbZr0.52Ti0.48O3 (PZT, 40 approximately 1200 nm)/YBa2Cu3O7-x (YBCO, 400 nm) film ferroelectric/superconductor heterostructures on the single-crystal neodymium doped yttrium monoaluminate [YAlO3+1%Nd2O3] and MgO substrates by KrF pulsed laser deposition technique. The dielectric constant of 950 and loss tangent δ of 0.04 have been found to be frequency independent in the range 100 Hz to 100 kHz while electric resistivity ρ (150 kV/cm) is of 6×1011 Ω·cm, remnant polarization and coercive field are 32 μC/cm2 and 43 kV/cm, respectively. Fast ferroelectric switching kinetics with characteristic switching time around 50 ns has been observed. Universal electric field and temperature dependencies of switching time as well as film thickness dependence of coercive electric field have been observed and correspond to ferroelectric needle-like domain switching.

ジャーナルMaterials Research Society Symposium - Proceedings
出版ステータス出版済み - 1998
イベントProceedings of the 1998 MRS Spring Meeting - San Francisco, CA, USA
継続期間: 4月 13 19984月 16 1998

!!!All Science Journal Classification (ASJC) codes

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学


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