Surface plasmon enhanced spontaneous emission rate of InGaNGaN quantum wells probed by time-resolved photoluminescence spectroscopy

Koichi Okamoto, Isamu Niki, Axel Scherer, Yukio Narukawa, Takashi Mukai, Yoichi Kawakami

研究成果: ジャーナルへの寄稿学術誌査読

361 被引用数 (Scopus)

抄録

We observed a 32-fold increase in the spontaneous emission rate of InGaN/GaN quantum well (QW) at 440 nm by employing surface plasmons (SPs) probed by time-resolved photoluminescence spectroscopy. We explore this remarkable enhancement of the emission rates and intensities resulting from the efficient energy transfer from electron-hole pair recombination in the QW to electron vibrations of SPs at the metal-coated surface of the semiconductor heterostructure. This QW-SP coupling is expected to lead to a new class of super bright and high-speed light-emitting diodes (LEDs) that offer realistic alternatives to conventional fluorescent tubes.

本文言語英語
論文番号071102
ジャーナルApplied Physics Letters
87
7
DOI
出版ステータス出版済み - 8月 15 2005
外部発表はい

!!!All Science Journal Classification (ASJC) codes

  • 物理学および天文学(その他)

フィンガープリント

「Surface plasmon enhanced spontaneous emission rate of InGaNGaN quantum wells probed by time-resolved photoluminescence spectroscopy」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル