Substrate temperature dependence of photovoltaic properties of β-FeSi₂/Si heterojunctions prepared by facing-target DC sputtering

We fabricated n-type β-FeSi₂/p-type Si heterojunctions to be used as thin-film solar cells by the facing-target DC sputtering method. The β-FeSi₂ films were deposited on Si(111) substrates at different substrate temperatures ranging from 525 to 660°C. The effect of the substrate temperature on the photovoltaic properties was studied on the basis of the current-voltage characterization and the crystalline structural evaluation of the β-FeSi₂/Si heterojunctions. It was found that 600°C is the optimum substrate temperature suitable for the photovoltaic application.