Substrate effect on mechanical relaxation of polystyrene in ultrathin films

K. I. Akabori, K. Tanaka, A. Takahara, T. Kajiyama, T. Nagamura

研究成果: ジャーナルへの寄稿学術誌査読

16 被引用数 (Scopus)

抄録

Mechanical relaxation behavior in ultrathin polystyrene(PS) films supported on silicon oxide (SiOx) and gold (Au) substrates has been studied by dynamic viscoelastic measurement. Based on the method, effects of free surface and substrate interface on the segmental dynamics were discussed. In the case of thin PS films with a thickness of approximately 200 nm, αa-relaxation process corresponding to the segmental motion did not show any deviation from the bulk behavior. Incontrast, for the films thinner than about 50 nm, the relaxation time distribution for the αa-process became broader, probably due toa mobility gradient in the surface and interfacial regions. When we sandwiched an ultrathin PS film between SiOx layers, another relaxation process, in addition to the original αa-process, appeared at ahigher temperature side that we assigned to the interfacial αa-relaxation process. However, this was never seen for an ultrathin PS film between Au layers, implying that restriction from the substrate interface might be weak in this case.

本文言語英語
ページ(範囲)173-180
ページ数8
ジャーナルEuropean Physical Journal: Special Topics
141
1
DOI
出版ステータス出版済み - 2月 2007

!!!All Science Journal Classification (ASJC) codes

  • 材料科学一般
  • 物理学および天文学一般
  • 物理化学および理論化学

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