Structural determination of indium-induced Si(111) reconstructed surfaces by LEED analysis: (√3×√3)R30° and (4×1)

S. Mizuno, Y. O. Mizuno, H. Tochihara

    研究成果: ジャーナルへの寄稿学術誌査読

    49 被引用数 (Scopus)

    抄録

    Two indium-induced Si(111) reconstructed surfaces, the (√3×√×)R30° and the (4×1) structures, were examined by dynamical low-energy electron diffraction I-V analysis. As suggested in former studies, the T4 model of the (√3×√3)R30° structure showed the best agreement with the experiments. For the (4×1) structure, we examined 45 models and selected the model proposed by a surface x-ray diffraction study as the most appropriate structure. The low-temperature phase, whose diffraction pattern is (8×1)-p1g1 with half-order streaks, has I-V curves almost identical to those of the (4×1) phase. Therefore, the structural changes accompanying a phase transition between the (4×1) and (8×1)-p1g1 structures should be very small.

    本文言語英語
    論文番号195410
    ページ(範囲)1954101-1954108
    ページ数8
    ジャーナルPhysical Review B - Condensed Matter and Materials Physics
    67
    19
    出版ステータス出版済み - 5月 2003

    !!!All Science Journal Classification (ASJC) codes

    • 電子材料、光学材料、および磁性材料
    • 凝縮系物理学

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