Structural and electrical characterization of AgInSe2 crystals grown by hot-press method

Kenji Yoshino, Aya Kinoshita, Yasuhiro Shirahata, Minoru Oshima, Keita Nomoto, Tsuyoshi Yoshitake, Shunji Ozaki, Tetsuo Ikari

    研究成果: ジャーナルへの寄稿学術誌査読

    22 被引用数 (Scopus)

    抄録

    Undoped polycrystalline AgInSe2 crystals were successfully grown at low temperature (650 °C) using a hot-press method. The sizes of the samples were 2 cm in diameter. The largest grain size was approximately 90 nm. The presence of lattice defects such as Ag interstitials might lead to an enhancement in n-type electrical conductivity. The crystals had a resistivity of 2.2 Ω cm, a carrier concentration of 4.2 × 1016 cm 3 and a mobility of 70 cm2V-1s-1 obtained by Hall measurement at RT.

    本文言語英語
    論文番号042042
    ジャーナルJournal of Physics: Conference Series
    100
    PART 4
    DOI
    出版ステータス出版済み - 3月 1 2008

    !!!All Science Journal Classification (ASJC) codes

    • 物理学および天文学一般

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