Stress concentration and surface roughness effect on strength of polycrystalline silicon structure

Shigeru Hamada; Shuichi Tani; Daisuke Katagiri; Masahiro Tsugai; Makio Horikawa; Hiroshi Otani

Stress concentration and surface roughness effect on strength of polycrystalline silicon structure

Shigeru Hamada, Shuichi Tani, Daisuke Katagiri, Masahiro Tsugai, Makio Horikawa, Hiroshi Otani

研究成果: 書籍/レポートタイプへの寄稿 › 会議への寄与

抄録

In order to clarify the stress concentration and surface roughness effect on strength of the polycrystalline silicon (poly-Si) structure, bending tests of poly-Si microcantilever beam specimen and surface roughness measurement is performed. The bending test results are analyzed by means of maximum stress at the notch root calculated by FEM models, and it is found that this approach cannot describe the test results. Therefore, modified approach is taken into account by use of two parameters that are the maximum stress and area where stress is larger than 50% of the maximum stress, which indicates stress extension around the position of maximum stress representatively. By this two parameters approach, the test results are explained quantitatively and a strength design chart for stress concentration area of the poly-Si structure is obtained. On the other hand, relationship between strength and surface roughness are confirmed and useful information for the process quality control are obtained.

本文言語	英語
ホスト出版物のタイトル	Proceedings of the ASME/Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems: Advances in Electronic Packaging 2005
ページ	1929-1934
ページ数	6
巻	PART C
出版ステータス	出版済み - 2006
外部発表	はい
イベント	ASME/Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems: Advances in Electronic Packaging 2005 - San Francisco, CA, 米国継続期間: 7月 17 2005 → 7月 22 2005

その他

その他	ASME/Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems: Advances in Electronic Packaging 2005
国/地域	米国
City	San Francisco, CA
Period	7/17/05 → 7/22/05

!!!All Science Journal Classification (ASJC) codes

工学（全般）

他のファイルとリンク

引用スタイル

Hamada, S., Tani, S., Katagiri, D., Tsugai, M., Horikawa, M., & Otani, H. (2006). Stress concentration and surface roughness effect on strength of polycrystalline silicon structure. In Proceedings of the ASME/Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems: Advances in Electronic Packaging 2005 (Vol. PART C, pp. 1929-1934)

Stress concentration and surface roughness effect on strength of polycrystalline silicon structure. / Hamada, Shigeru; Tani, Shuichi; Katagiri, Daisuke その他.
Proceedings of the ASME/Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems: Advances in Electronic Packaging 2005. Vol. PART C 2006. p. 1929-1934.

研究成果: 書籍/レポートタイプへの寄稿 › 会議への寄与

Hamada, S, Tani, S, Katagiri, D, Tsugai, M, Horikawa, M & Otani, H 2006, Stress concentration and surface roughness effect on strength of polycrystalline silicon structure. in Proceedings of the ASME/Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems: Advances in Electronic Packaging 2005. vol. PART C, pp. 1929-1934, ASME/Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems: Advances in Electronic Packaging 2005, San Francisco, CA, 米国, 7/17/05.

Hamada S, Tani S, Katagiri D, Tsugai M, Horikawa M, Otani H. Stress concentration and surface roughness effect on strength of polycrystalline silicon structure. In Proceedings of the ASME/Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems: Advances in Electronic Packaging 2005. Vol. PART C. 2006. p. 1929-1934

Hamada, Shigeru ; Tani, Shuichi ; Katagiri, Daisuke その他. / Stress concentration and surface roughness effect on strength of polycrystalline silicon structure. Proceedings of the ASME/Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems: Advances in Electronic Packaging 2005. Vol. PART C 2006. pp. 1929-1934

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title = "Stress concentration and surface roughness effect on strength of polycrystalline silicon structure",

abstract = "In order to clarify the stress concentration and surface roughness effect on strength of the polycrystalline silicon (poly-Si) structure, bending tests of poly-Si microcantilever beam specimen and surface roughness measurement is performed. The bending test results are analyzed by means of maximum stress at the notch root calculated by FEM models, and it is found that this approach cannot describe the test results. Therefore, modified approach is taken into account by use of two parameters that are the maximum stress and area where stress is larger than 50% of the maximum stress, which indicates stress extension around the position of maximum stress representatively. By this two parameters approach, the test results are explained quantitatively and a strength design chart for stress concentration area of the poly-Si structure is obtained. On the other hand, relationship between strength and surface roughness are confirmed and useful information for the process quality control are obtained.",

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note = "ASME/Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems: Advances in Electronic Packaging 2005 ; Conference date: 17-07-2005 Through 22-07-2005",

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TY - GEN

T1 - Stress concentration and surface roughness effect on strength of polycrystalline silicon structure

AU - Hamada, Shigeru

AU - Tani, Shuichi

AU - Katagiri, Daisuke

AU - Tsugai, Masahiro

AU - Horikawa, Makio

AU - Otani, Hiroshi

PY - 2006

Y1 - 2006

N2 - In order to clarify the stress concentration and surface roughness effect on strength of the polycrystalline silicon (poly-Si) structure, bending tests of poly-Si microcantilever beam specimen and surface roughness measurement is performed. The bending test results are analyzed by means of maximum stress at the notch root calculated by FEM models, and it is found that this approach cannot describe the test results. Therefore, modified approach is taken into account by use of two parameters that are the maximum stress and area where stress is larger than 50% of the maximum stress, which indicates stress extension around the position of maximum stress representatively. By this two parameters approach, the test results are explained quantitatively and a strength design chart for stress concentration area of the poly-Si structure is obtained. On the other hand, relationship between strength and surface roughness are confirmed and useful information for the process quality control are obtained.

AB - In order to clarify the stress concentration and surface roughness effect on strength of the polycrystalline silicon (poly-Si) structure, bending tests of poly-Si microcantilever beam specimen and surface roughness measurement is performed. The bending test results are analyzed by means of maximum stress at the notch root calculated by FEM models, and it is found that this approach cannot describe the test results. Therefore, modified approach is taken into account by use of two parameters that are the maximum stress and area where stress is larger than 50% of the maximum stress, which indicates stress extension around the position of maximum stress representatively. By this two parameters approach, the test results are explained quantitatively and a strength design chart for stress concentration area of the poly-Si structure is obtained. On the other hand, relationship between strength and surface roughness are confirmed and useful information for the process quality control are obtained.

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BT - Proceedings of the ASME/Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems: Advances in Electronic Packaging 2005

T2 - ASME/Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems: Advances in Electronic Packaging 2005

Y2 - 17 July 2005 through 22 July 2005

ER -

Stress concentration and surface roughness effect on strength of polycrystalline silicon structure

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その他

!!!All Science Journal Classification (ASJC) codes

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