Stress analysis of dielectrics using FEM for Analyzing the cause of cracking observed after W-CMP

Akira Fukuda, Yoshihiro Mochizuki, Hirokuni Hiyama, Manabu Tsujimura, Toshiro Doi, Syuhei Kurokawa

研究成果: ジャーナルへの寄稿学術誌査読

2 被引用数 (Scopus)

抄録

This study examined the cause of the mechanical fracture (cracking) of dielectrics observed after chemical mechanical polishing (CMP) in the damascene interconnect process for W/oxide structures through the stress analysis of dielectrics with the finite element method (FEM). The analysis, performed considering polishing pressure during CMP and residual film stress, revealed that the stress in dielectrics generated by polishing pressure during CMP was approximately 2% of that generated through W film removal. This result suggests a high likelihood that the cracking of dielectrics observed after CMP is caused by the release of residual stress in W film through CMP. To prevent the mechanical fracture of dielectrics, it is thus important to reduce defects in the deposition of dielectrics and to decrease residual film stress.

本文言語英語
ページ(範囲)H694-H698
ジャーナルJournal of the Electrochemical Society
156
9
DOI
出版ステータス出版済み - 2009

!!!All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 材料化学
  • 表面、皮膜および薄膜
  • 電気化学
  • 再生可能エネルギー、持続可能性、環境

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