TY - JOUR
T1 - Strained single-crystal GOI (Ge on Insulator) arrays by rapid-melting growth from Si (1 1 1) micro-seeds
AU - Sakane, T.
AU - Toko, K.
AU - Tanaka, T.
AU - Sadoh, T.
AU - Miyao, M.
N1 - Funding Information:
The authors wish to thank to Prof. T. Asano and Dr. N. Watanabe of Kyushu University for providing the tip-array substrates and their helpful discussions. A part of this work was supported by Semiconductor Technology Academic Research Center and a Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, and Technology in Japan.
PY - 2011/6
Y1 - 2011/6
N2 - Liquid-phase epitaxial growth of Ge islands on insulator (GOI) using Ni-imprint-induced Si (1 1 1) micro-crystal seeds (∼1 μmφ) is proposed. As a result, single-crystalline GOI (1 1 1) structures with large area (∼10 μmφ) are realized. The transmission electron microscopy observations reveal no dislocation or stacking fault in the laterally grown regions. Moreover, the Raman measurements show that the tensile strain (∼0.2%) which enhances the carrier mobility is induced in the growth regions. This new method can be employed to realize the multi-functional SiGe large scale integrated circuits.
AB - Liquid-phase epitaxial growth of Ge islands on insulator (GOI) using Ni-imprint-induced Si (1 1 1) micro-crystal seeds (∼1 μmφ) is proposed. As a result, single-crystalline GOI (1 1 1) structures with large area (∼10 μmφ) are realized. The transmission electron microscopy observations reveal no dislocation or stacking fault in the laterally grown regions. Moreover, the Raman measurements show that the tensile strain (∼0.2%) which enhances the carrier mobility is induced in the growth regions. This new method can be employed to realize the multi-functional SiGe large scale integrated circuits.
UR - https://www.scopus.com/pages/publications/79955524106
UR - https://www.scopus.com/pages/publications/79955524106#tab=citedBy
U2 - 10.1016/j.sse.2011.01.037
DO - 10.1016/j.sse.2011.01.037
M3 - Article
AN - SCOPUS:79955524106
SN - 0038-1101
VL - 60
SP - 22
EP - 25
JO - Solid-State Electronics
JF - Solid-State Electronics
IS - 1
ER -