抄録
Spatial distribution of photoluminescence (PL) spectra has been assessed in an InGaN single quantum well (SQW) structure by means of fluorescence microscopy and scanning near-field optical microscopy (SNOM) under illumination-collection mode. The PL intensity of fluorescence image is uniform at 77 K, but the dark spot areas were extended with increasing temperature. The nearfield PL images revealed the variation of both peak energy and intensity in PL spectra according to the probing location with the scale less than a few hundreds nm.
本文言語 | 英語 |
---|---|
ページ(範囲) | 153-156 |
ページ数 | 4 |
ジャーナル | Physica Status Solidi (B) Basic Research |
巻 | 228 |
号 | 1 |
DOI | |
出版ステータス | 出版済み - 11月 2001 |
外部発表 | はい |
!!!All Science Journal Classification (ASJC) codes
- 電子材料、光学材料、および磁性材料
- 凝縮系物理学