Solution-based fabrication of high-k gate dielectrics

Y. Aoki; T. Kunitake

doi:10.1109/IWGI.2003.159179

Solution-based fabrication of high-k gate dielectrics

Y. Aoki
, T. Kunitake

研究成果: 書籍/レポートタイプへの寄稿 › 会議への寄与

抄録

In this paper, we conducted fabrication of ultrathin films from conventional dielectric materials MO_x (M=Ti, Zr) as well as from binary oxide composites MO_x-MO_y (M=Ta, La).

本文言語	英語
ホスト出版物のタイトル	Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003
出版社	Institute of Electrical and Electronics Engineers Inc.
ページ	40-41
ページ数	2
ISBN（電子版）	4891140372, 9784891140373
DOI	https://doi.org/10.1109/IWGI.2003.159179
出版ステータス	出版済み - 2003
外部発表	はい
イベント	International Workshop on Gate Insulator, IWGI 2003 - Tokyo, 日本継続期間: 11月 6 2003 → 11月 7 2003

出版物シリーズ

名前	Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003

その他

その他	International Workshop on Gate Insulator, IWGI 2003
国/地域	日本
City	Tokyo
Period	11/6/03 → 11/7/03

!!!All Science Journal Classification (ASJC) codes

電子材料、光学材料、および磁性材料
電子工学および電気工学

文献へのアクセス

10.1109/IWGI.2003.159179

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引用スタイル

Solution-based fabrication of high-k gate dielectrics. / Aoki, Y.; Kunitake, T.
Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003. Institute of Electrical and Electronics Engineers Inc., 2003. p. 40-41 1252504 (Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003).

研究成果: 書籍/レポートタイプへの寄稿 › 会議への寄与

Aoki, Y & Kunitake, T 2003, Solution-based fabrication of high-k gate dielectrics. in Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003., 1252504, Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003, Institute of Electrical and Electronics Engineers Inc., pp. 40-41, International Workshop on Gate Insulator, IWGI 2003, Tokyo, 日本, 11/6/03. https://doi.org/10.1109/IWGI.2003.159179

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title = "Solution-based fabrication of high-k gate dielectrics",

abstract = "In this paper, we conducted fabrication of ultrathin films from conventional dielectric materials MOx (M=Ti, Zr) as well as from binary oxide composites MOx-MOy (M=Ta, La).",

author = "Y. Aoki and T. Kunitake",

note = "Publisher Copyright: {\textcopyright} 2003 Japan Society of Applied Physics.; International Workshop on Gate Insulator, IWGI 2003 ; Conference date: 06-11-2003 Through 07-11-2003",

year = "2003",

doi = "10.1109/IWGI.2003.159179",

language = "English",

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M3 - Conference contribution

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T3 - Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003

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BT - Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - International Workshop on Gate Insulator, IWGI 2003

Y2 - 6 November 2003 through 7 November 2003

ER -

Solution-based fabrication of high-k gate dielectrics

抄録

出版物シリーズ

その他

!!!All Science Journal Classification (ASJC) codes

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