TY - GEN
T1 - Solid-Phase Crystallization Characteristics of Interface-Modulated Sn- Doped Ge Thin Films on Insulator with Capping
AU - Nagano, Takaya
AU - Hara, Ryutaro
AU - Sadoh, Taizoh
N1 - Publisher Copyright:
© 2022 International Society of Functional Thin Film Materals & Devices (FTFMD).
PY - 2022
Y1 - 2022
N2 - Thin poly-Ge films (thickness: ≤ 50 nm) having high carrier mobility are required for advanced thin-film devices. However, carrier mobility of poly-Ge films obtained by conventional solid-phase crystallization (SPC) significantly decreases with decreasing thickness below 50 nm. To solve this problem, we develop an interface-modulated SPC of Sn-doped Ge combined with a-Si capping. In the present study, we investigate growth characteristics of a-Si capped Sn-doped Ge films on insulator. It is clarified that a-Si capping enhances SPC of Sn-doped Ge films and results in large crystal grains, which improves the carrier mobility of Sn-doped Ge thin films. This technique will be useful to realize advanced thin-film devices for next-generation electronics.
AB - Thin poly-Ge films (thickness: ≤ 50 nm) having high carrier mobility are required for advanced thin-film devices. However, carrier mobility of poly-Ge films obtained by conventional solid-phase crystallization (SPC) significantly decreases with decreasing thickness below 50 nm. To solve this problem, we develop an interface-modulated SPC of Sn-doped Ge combined with a-Si capping. In the present study, we investigate growth characteristics of a-Si capped Sn-doped Ge films on insulator. It is clarified that a-Si capping enhances SPC of Sn-doped Ge films and results in large crystal grains, which improves the carrier mobility of Sn-doped Ge thin films. This technique will be useful to realize advanced thin-film devices for next-generation electronics.
UR - http://www.scopus.com/inward/record.url?scp=85137816020&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85137816020&partnerID=8YFLogxK
U2 - 10.23919/AM-FPD54920.2022.9851292
DO - 10.23919/AM-FPD54920.2022.9851292
M3 - Conference contribution
AN - SCOPUS:85137816020
T3 - Proceedings of AM-FPD 2022 - 29th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials
SP - 114
EP - 115
BT - Proceedings of AM-FPD 2022 - 29th International Workshop on Active-Matrix Flatpanel Displays and Devices
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 29th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2022
Y2 - 5 July 2022 through 8 July 2022
ER -