Sn Concentration Effects on Polycrystalline GeSn Thin Film Transistors

Kenta Moto, Keisuke Yamamoto, Toshifumi Imajo, Takashi Suemasu, Hiroshi Nakashima, Kaoru Toko

研究成果: ジャーナルへの寄稿学術誌査読

11 被引用数 (Scopus)

抄録

Thin-film transistor (TFT) applications of GeSn have attracted attention as a means of improving the performance of electronic devices. Based on our advanced solid-phase crystallization and TFT process technologies, we comprehensively studied the relationship between the film properties and TFT characteristics of polycrystalline GeSn. The initial Sn concentration ${x}_{\mathrm {i}}$ significantly changed the crystal and electrical properties of the GeSn layer. Excess Sn ( ${x}_{\mathrm {i}} \ge 4.5$ %) precipitated in GeSn and degraded its properties, whereas the appropriate amount of Sn effectively passivated defects in Ge and reduced the density of defect-induced acceptors and grain boundary traps while maintaining a high Hall hole mobility (>200 cm2 V-1 s-1). The performance of the accumulation-mode TFTs fabricated under 400 °C also strongly depended on $\boldsymbol {x}_{\mathrm {i}}$ , achieving both a high field-effect mobility (170 cm2 V-1 s-1) and on/off ratio (103) at ${x}_{\mathrm {i}} = 1.6$ %. This performance was shown to be the highest among Ge-based TFTs with grain boundaries in the channel.

本文言語英語
ページ(範囲)1735-1738
ページ数4
ジャーナルIEEE Electron Device Letters
42
12
DOI
出版ステータス出版済み - 12月 1 2021

!!!All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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