TY - JOUR
T1 - Slit Field Plate Power MOSFET for Improvement of Figure-Of-Merits
AU - Ogawa, Taichi
AU - Saito, Wataru
AU - Nishizawa, Shin Ichi
N1 - Publisher Copyright:
© 2013 IEEE.
PY - 2021
Y1 - 2021
N2 - A new low-voltage power MOSFET is proposed to improve the figure-of-merits (FOMs) for power loss reduction. Slit field plate (Slit FP) structure is effective to cope with both the on-resistance Ron A reduction and high speed switching due to flat electric field distribution and low gate density by the slit oxide. Therefore, Slit FP power MOSFET achieves better RonA-Ron Qsw and RonA-Ron Qg tradeoff characteristics compared with conventional FP power MOSFET. TCAD simulation result shows 12% of Ron A, 11% of Ron Qsw, and 20% of Ron Qg can be reduced simultaneously by the Slit FP power MOSFET compared with the conventional FP power MOSFET at the lowest Ron A design.
AB - A new low-voltage power MOSFET is proposed to improve the figure-of-merits (FOMs) for power loss reduction. Slit field plate (Slit FP) structure is effective to cope with both the on-resistance Ron A reduction and high speed switching due to flat electric field distribution and low gate density by the slit oxide. Therefore, Slit FP power MOSFET achieves better RonA-Ron Qsw and RonA-Ron Qg tradeoff characteristics compared with conventional FP power MOSFET. TCAD simulation result shows 12% of Ron A, 11% of Ron Qsw, and 20% of Ron Qg can be reduced simultaneously by the Slit FP power MOSFET compared with the conventional FP power MOSFET at the lowest Ron A design.
UR - http://www.scopus.com/inward/record.url?scp=85105861821&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85105861821&partnerID=8YFLogxK
U2 - 10.1109/JEDS.2021.3079396
DO - 10.1109/JEDS.2021.3079396
M3 - Article
AN - SCOPUS:85105861821
SN - 2168-6734
VL - 9
SP - 552
EP - 556
JO - IEEE Journal of the Electron Devices Society
JF - IEEE Journal of the Electron Devices Society
M1 - 9429711
ER -