Single-step metal-insulator transition in thin film-based vanadium dioxide nanowires with a 20 nm electrode gap

Yoshihide Tsuji, Teruo Kanki, Yasukazu Murakami, Hidekazu Tanaka

研究成果: ジャーナルへの寄稿学術誌査読

12 被引用数 (Scopus)

抄録

We demonstrated a single resistance jump with orders of magnitude changes caused by a metal-insulator transition (MIT) in one domain in single-crystal VO2 nanowires with a 20 nm electrode gap. The nanowires were prepared from VO2 thin films on TiO2 (001) substrates and can provide numerous devices on a monolithic substrate using desired designs with precise positioning. The transport behavior of a single domain provides a simple understanding of the MIT and will apply an effective homogeneous electric field to a VO2 channel, aiding the development of Mott field-effect transistors and other devices using electronic phase changes.

本文言語英語
論文番号025003
ジャーナルApplied Physics Express
12
2
DOI
出版ステータス出版済み - 2月 2019

!!!All Science Journal Classification (ASJC) codes

  • 工学一般
  • 物理学および天文学一般

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