TY - GEN
T1 - Single-step dry-etched lateral PIN by using trench structure for optical mode switch
AU - Imansyah, Ryan
AU - Himbele, Luke
AU - Jiang, Haisong
AU - Hamamoto, Kiichi
N1 - Publisher Copyright:
© 2015 IEEE.
PY - 2015/11/13
Y1 - 2015/11/13
N2 - Trench structure that enables lateral PIN with single-step dry-etching was exploited to optical mode switch for the first time. Successful current-injected (60mA) optical mode switching was confirmed with polarization independent characteristics.
AB - Trench structure that enables lateral PIN with single-step dry-etching was exploited to optical mode switch for the first time. Successful current-injected (60mA) optical mode switching was confirmed with polarization independent characteristics.
UR - https://www.scopus.com/pages/publications/84962688037
UR - https://www.scopus.com/pages/publications/84962688037#tab=citedBy
U2 - 10.1109/PS.2015.7329010
DO - 10.1109/PS.2015.7329010
M3 - Conference contribution
AN - SCOPUS:84962688037
T3 - 2015 International Conference on Photonics in Switching, PS 2015
SP - 232
EP - 234
BT - 2015 International Conference on Photonics in Switching, PS 2015
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - International Conference on Photonics in Switching, PS 2015
Y2 - 22 September 2015 through 25 September 2015
ER -