TY - GEN
T1 - SiN used as a Stressor in Germanium-On-Insulator Substrate
AU - Duangchan, Sethavut
AU - Yamamoto, Keisuke
AU - Wang, Dong
AU - Nakashima, Hiroshi
AU - Baba, Akiyoshi
N1 - Publisher Copyright:
© 2019 IEEE.
PY - 2019/10
Y1 - 2019/10
N2 - This research aims to show the advantage of using silicon nitride as a stressor in a strained germanium-on-insulator substrate (strained Ge). A Si substrate is patterned on the surface before bonding for controlling the shape and the position of strained Ge. The SiN film is deposited on Ge substrate by PE-CVD with 150 nm thick approximately. Two substrates are bonded together by surface-Activation bonding with 200°C post-Anneal. It was found that the tensile strain of 1.16% for the flat part and 2.03% for the bucking part, which is higher than other reported GOI using SiO2 layer.
AB - This research aims to show the advantage of using silicon nitride as a stressor in a strained germanium-on-insulator substrate (strained Ge). A Si substrate is patterned on the surface before bonding for controlling the shape and the position of strained Ge. The SiN film is deposited on Ge substrate by PE-CVD with 150 nm thick approximately. Two substrates are bonded together by surface-Activation bonding with 200°C post-Anneal. It was found that the tensile strain of 1.16% for the flat part and 2.03% for the bucking part, which is higher than other reported GOI using SiO2 layer.
UR - http://www.scopus.com/inward/record.url?scp=85084108727&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85084108727&partnerID=8YFLogxK
U2 - 10.1109/3DIC48104.2019.9058896
DO - 10.1109/3DIC48104.2019.9058896
M3 - Conference contribution
AN - SCOPUS:85084108727
T3 - IEEE 2019 International 3D Systems Integration Conference, 3DIC 2019
BT - IEEE 2019 International 3D Systems Integration Conference, 3DIC 2019
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2019 IEEE International 3D Systems Integration Conference, 3DIC 2019
Y2 - 8 October 2019 through 10 October 2019
ER -