Simulation Study on Dual Gate Control of Surface Buffer Insulated Gate Bipolar Transistor for High Switching Controllability

Wataru Saito; Shin ichi Nishizawa

doi:10.1109/LED.2021.3075657

Simulation Study on Dual Gate Control of Surface Buffer Insulated Gate Bipolar Transistor for High Switching Controllability

Wataru Saito, Shin ichi Nishizawa

研究成果: ジャーナルへの寄稿 › 学術誌 › 査読

5 被引用数 (Scopus)

抄録

A new device design in trench-gate insulated gate bipolar transistor (IGBT) with dual gate control is proposed for high switching controllability with low loss operation. Injection enhancement effect is effective to obtain low power loss operation of IGBTs. However, excess drift carriers limit turn-off dV/dt, and turn-on dI/dt, and the switching controllability by the external gate resistance is degraded. Surface buffer (SB) IGBT with dual gate control is effective to improve the switching controllability, because the hole current can be modulated effectively by the p-MOS control. TCAD simulation results show the SB-IGBT type-II with dual gate control is the best choice for good turn-off and turn-on switching performances.

本文言語	英語
ジャーナル	IEEE Electron Device Letters
DOI	https://doi.org/10.1109/LED.2021.3075657
出版ステータス	印刷中 - 2021

!!!All Science Journal Classification (ASJC) codes

電子材料、光学材料、および磁性材料
電子工学および電気工学

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10.1109/LED.2021.3075657

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引用スタイル

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abstract = "A new device design in trench-gate insulated gate bipolar transistor (IGBT) with dual gate control is proposed for high switching controllability with low loss operation. Injection enhancement effect is effective to obtain low power loss operation of IGBTs. However, excess drift carriers limit turn-off dV/dt, and turn-on dI/dt, and the switching controllability by the external gate resistance is degraded. Surface buffer (SB) IGBT with dual gate control is effective to improve the switching controllability, because the hole current can be modulated effectively by the p-MOS control. TCAD simulation results show the SB-IGBT type-II with dual gate control is the best choice for good turn-off and turn-on switching performances.",

author = "Wataru Saito and Nishizawa, {Shin ichi}",

note = "Publisher Copyright: IEEE",

year = "2021",

doi = "10.1109/LED.2021.3075657",

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