Silicon carbide bulk crystal growth modeling from atomic scale to reactor scale

研究成果: 書籍/レポート タイプへの寄稿会議への寄与

抄録

The state of the art of silicon carbide crystal growth modeling is explained from the two aspects. One is the technical problems of SiC bulk single crystal growth process by sublimation method. Numerical modeling can contribute on the reactor design and process condition optimization. Then the shape of SiC grown crystal (diameter and length) can be controlled by modifying the growth crucible design. Second one is the theoretical problem of SiC polytype control. By calculating the bulk crystal energy of each polytype, and surface energy of each possible surface during growth, it is pointed out that growin surface energy has effects on the polytype stability of SiC crystals.

本文言語英語
ホスト出版物のタイトルGallium Nitride and Silicon Carbide Power Technologies 2
出版社Electrochemical Society Inc.
ページ119-126
ページ数8
3
ISBN(印刷版)9781607683513
DOI
出版ステータス出版済み - 2013
外部発表はい
イベント2nd Symposium on Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Technologies - ECS Fall 2012 Meeting - Honolulu, HI, 米国
継続期間: 10月 7 201210月 12 2012

出版物シリーズ

名前ECS Transactions
番号3
50
ISSN(印刷版)1938-5862
ISSN(電子版)1938-6737

その他

その他2nd Symposium on Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Technologies - ECS Fall 2012 Meeting
国/地域米国
CityHonolulu, HI
Period10/7/1210/12/12

!!!All Science Journal Classification (ASJC) codes

  • 工学一般

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