SiGeミキシング誘起溶融法による単結晶GOI (Ge on Insulator) 形成のシード基板面方位・成長方向依存性

大田 康晴, 田中 貴規, 佐道 泰造, 宮尾 正信

研究成果: ジャーナルへの寄稿学術誌査読

抄録

We proposed SiGe mixing triggered melting growth, and realized (100)-oriented Ge on insulator (GOI) stripes (〜400μm) by using Si(100) substrates as crystal seed. To expand the application fields of such GOI structures, GOI stripes with various crystal orientations should be achieved. In the present study, growth-direction-dependent characteristics of GOI from Si(100), (110), (111) seeding substrates are investigated. During the study, we encountered a phenomenon of rotating growth of Ge layers. The detail of the rotation growth is investigated, and a guideline to prevent this phenomenon is clarified. As a results, GOI(110) and (111) stripes without the rotation are realized, together with GOI(100) stripes. Moreover, a large mesh (500μm × 250μm) of GOI stripe is realized based on these findings.
寄稿の翻訳タイトルCrystal Orientation Dependent Growth Features of Ge-on-Insulator by SiGe Mixing Triggered Melting Process
本文言語日本語
ページ(範囲)49-52
ページ数4
ジャーナルIEICE technical report
110
16
出版ステータス出版済み - 4月 16 2010

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