TY - JOUR
T1 - SiC single crystal growth rate measurement by in-situ observation using the transmission X-ray technique
AU - Oyanagi, Naoki
AU - Nishizawa, Shin Ichi
AU - Kato, Tomohisa
AU - Yamaguchi, Hirotaka
AU - Arai, Kazuo
PY - 2000
Y1 - 2000
N2 - The growth rate of SiC bulk single crystal by sublimation was measured in real time by using the transmission X-ray technique. The growth rate obtained by transmission X-ray intensity corresponds to the growth rate measured by nitrogen marker. The growth rate increases as the growth temperature increases and as pressure decreases. While taking into account the pressure balance between the surrounding pressure and vapor pressures of seed and source, the growth rate can be calculated by mass flux from source to seed.
AB - The growth rate of SiC bulk single crystal by sublimation was measured in real time by using the transmission X-ray technique. The growth rate obtained by transmission X-ray intensity corresponds to the growth rate measured by nitrogen marker. The growth rate increases as the growth temperature increases and as pressure decreases. While taking into account the pressure balance between the surrounding pressure and vapor pressures of seed and source, the growth rate can be calculated by mass flux from source to seed.
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M3 - Conference article
AN - SCOPUS:12944335308
SN - 0255-5476
VL - 338
SP - I/-
JO - Materials Science Forum
JF - Materials Science Forum
T2 - ICSCRM '99: The International Conference on Silicon Carbide and Related Materials
Y2 - 10 October 1999 through 15 October 1999
ER -