TY - GEN
T1 - SiC Materials and Devices for Future Green Society
AU - Nishizawa, Shin Ichi
N1 - Publisher Copyright:
© 2024 IEEE.
PY - 2024
Y1 - 2024
N2 - SiC has high expectations as a next-generation power device material and device because of its excellent semiconductor properties. This report introduces power electronics application fields in which SiC is expected to be used. SiC wafer technology, which is the starting point of the supply chain for realizing this goal, is also introduced.
AB - SiC has high expectations as a next-generation power device material and device because of its excellent semiconductor properties. This report introduces power electronics application fields in which SiC is expected to be used. SiC wafer technology, which is the starting point of the supply chain for realizing this goal, is also introduced.
UR - http://www.scopus.com/inward/record.url?scp=85193287825&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85193287825&partnerID=8YFLogxK
U2 - 10.1109/EDTM58488.2024.10512311
DO - 10.1109/EDTM58488.2024.10512311
M3 - Conference contribution
AN - SCOPUS:85193287825
T3 - IEEE Electron Devices Technology and Manufacturing Conference: Strengthening the Globalization in Semiconductors, EDTM 2024
BT - IEEE Electron Devices Technology and Manufacturing Conference
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 8th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2024
Y2 - 3 March 2024 through 6 March 2024
ER -