TY - JOUR
T1 - Shape of SiC bulk single crystal grown by sublimation
AU - Nishizawa, Shin Ichi
AU - Kitou, Yasuo
AU - Bahng, Wook
AU - Oyanagi, Naoki
AU - Khan, Muhammad Nasir
AU - Arai, Kazuo
N1 - Copyright:
Copyright 2005 Elsevier Science B.V., Amsterdam. All rights reserved.
PY - 2000
Y1 - 2000
N2 - Numerical simulation of sublimation SiC bulk single crystal growth was performed. Electromagnetic and temperature fields in a growth furnace were analyzed numerically. The relation between grown crystal shape and temperature distribution in a growth cavity was discussed. It is pointed out that the crystal shape has a close relationship with temperature distribution. By modifying the crucible design and temperature distribution in a growth cavity, it is possible to enhance the enlargement of grown crystal, and also possible to keep grown surface flat.
AB - Numerical simulation of sublimation SiC bulk single crystal growth was performed. Electromagnetic and temperature fields in a growth furnace were analyzed numerically. The relation between grown crystal shape and temperature distribution in a growth cavity was discussed. It is pointed out that the crystal shape has a close relationship with temperature distribution. By modifying the crucible design and temperature distribution in a growth cavity, it is possible to enhance the enlargement of grown crystal, and also possible to keep grown surface flat.
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M3 - Conference article
AN - SCOPUS:12944286623
SN - 0255-5476
VL - 338
SP - I/-
JO - Materials Science Forum
JF - Materials Science Forum
T2 - ICSCRM '99: The International Conference on Silicon Carbide and Related Materials
Y2 - 10 October 1999 through 15 October 1999
ER -