Selective writing of sub-μm2 domain in spin valve strip with current coincident scheme

K. Matsuyama, N. Murashima, M. Higashidani, Y. Nozaki

研究成果: ジャーナルへの寄稿会議記事査読

抄録

Cooperative nucleation of sub-μm2 domains has been performed for a spin valve strip (0.4 μm width) of NiFe/Co/Cu/Co overlaid with orthogonal two-layer conductors (write and assist conductors). The current induced MR change due to the write current Iw markedly increases with the additional assist current Ia. Threshold value of Iw required for domain nucleation was decreased from 15 mA/μm to 9 mA/μm by the application of Ia with an amplitude of 10 mA/μm, which confirms selective writing with the current coincident scheme. The cooperative effect disappears, when the phase difference between Iw and Ia becomes larger than the pulse width of 30 ns. Which can be associated with the fast relaxation time of the magnetization process in the sub-μm2 region.

本文言語英語
ページ(範囲)2767-2769
ページ数3
ジャーナルIEEE Transactions on Magnetics
36
5 I
DOI
出版ステータス出版済み - 9月 2000
イベント2000 International Magnetics Conference (INTERMAG 2000) - Toronto, Ont, カナダ
継続期間: 4月 9 20004月 12 2000

!!!All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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