Scanning tunneling microscopic and spectroscopic studies on a crystalline silica monolayer epitaxially formed on hexagonal SiC (000 1 ̄) surfaces

Hiroshi Tochihara; Tetsuroh Shirasawa; Takayuki Suzuki; Toshio Miyamachi; Takashi Kajiwara; Kazuma Yagyu; Shunsuke Yoshizawa; Toshio Takahashi; Satoru Tanaka; Fumio Komori

doi:10.1063/1.4863753

Scanning tunneling microscopic and spectroscopic studies on a crystalline silica monolayer epitaxially formed on hexagonal SiC (000 1 ̄) surfaces

Hiroshi Tochihara
, Tetsuroh Shirasawa
, Takayuki Suzuki
, Toshio Miyamachi
, Takashi Kajiwara
, Kazuma Yagyu
, Shunsuke Yoshizawa
, Toshio Takahashi
, Satoru Tanaka
, Fumio Komori

応用物理学

研究成果: ジャーナルへの寄稿 › 学術誌 › 査読

5 被引用数 (Scopus)

抄録

An epitaxial silicon-oxide monolayer of chemical composition of Si ₂O₃ (the Si₂O₃ layer) formed on hexagonal SiC(0001̄) surfaces has been observed by scanning tunneling microscopy (STM). Filled- and empty-state STM images with atomic resolution support the previously reported model. Typical structural defects in the Si ₂O₃ layer are found to be missing SiO_n (n=1, 2, 3) molecules. The band gap of the Si₂O₃ layer obtained by point tunneling spectroscopy is 5.5±0.5eV, exhibiting considerable narrowing from that of bulk SiO₂, 8.9eV. It is proposed that the Si₂O₃ layer is suitable as a relevant interface material for formation of SiC-based metal-oxide-semiconductor devices.

本文言語	英語
論文番号	051601
ジャーナル	Applied Physics Letters
巻	104
号	5
DOI	https://doi.org/10.1063/1.4863753
出版ステータス	出版済み - 2月 3 2014

!!!All Science Journal Classification (ASJC) codes

物理学および天文学（その他）

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10.1063/1.4863753

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引用スタイル

Tochihara, H., Shirasawa, T., Suzuki, T., Miyamachi, T., Kajiwara, T., Yagyu, K., Yoshizawa, S., Takahashi, T., Tanaka, S., & Komori, F. (2014). Scanning tunneling microscopic and spectroscopic studies on a crystalline silica monolayer epitaxially formed on hexagonal SiC (000 1 ̄) surfaces. Applied Physics Letters, 104(5), 記事 051601. https://doi.org/10.1063/1.4863753

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abstract = "An epitaxial silicon-oxide monolayer of chemical composition of Si 2O3 (the Si2O3 layer) formed on hexagonal SiC(000{\=1}) surfaces has been observed by scanning tunneling microscopy (STM). Filled- and empty-state STM images with atomic resolution support the previously reported model. Typical structural defects in the Si 2O3 layer are found to be missing SiOn (n=1, 2, 3) molecules. The band gap of the Si2O3 layer obtained by point tunneling spectroscopy is 5.5±0.5eV, exhibiting considerable narrowing from that of bulk SiO2, 8.9eV. It is proposed that the Si2O3 layer is suitable as a relevant interface material for formation of SiC-based metal-oxide-semiconductor devices.",

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AU - Tochihara, Hiroshi

AU - Shirasawa, Tetsuroh

AU - Suzuki, Takayuki

AU - Miyamachi, Toshio

AU - Kajiwara, Takashi

AU - Yagyu, Kazuma

AU - Yoshizawa, Shunsuke

AU - Takahashi, Toshio

AU - Tanaka, Satoru

AU - Komori, Fumio

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AB - An epitaxial silicon-oxide monolayer of chemical composition of Si 2O3 (the Si2O3 layer) formed on hexagonal SiC(0001̄) surfaces has been observed by scanning tunneling microscopy (STM). Filled- and empty-state STM images with atomic resolution support the previously reported model. Typical structural defects in the Si 2O3 layer are found to be missing SiOn (n=1, 2, 3) molecules. The band gap of the Si2O3 layer obtained by point tunneling spectroscopy is 5.5±0.5eV, exhibiting considerable narrowing from that of bulk SiO2, 8.9eV. It is proposed that the Si2O3 layer is suitable as a relevant interface material for formation of SiC-based metal-oxide-semiconductor devices.

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