Reverse bias dependent impedance and dielectric properties of Al/n-NC FeSi2/p-Si/Pd heterostructures formed by facing-targets sputtering

Nattakorn Borwornpornmetee, Rawiwan Chaleawpong, Peerasil Charoenyuenyao, Adison Nopparuchikun, Boonchoat Paosawatyanyong, Phongsaphak Sittimart, Tsuyoshi Yoshitake, Nathaporn Promros

研究成果: ジャーナルへの寄稿学術誌査読

4 被引用数 (Scopus)

抄録

Al/n-NC FeSi2/p-Si/Pd heterostructures were formed by facing-targets sputtering. From the dark J-V results, the device showed rectifying action with leakage current. In this work, impedance spectroscopy was employed to study the electrochemical characteristics of the heterostructures, which were inspected within a frequency (f) range from 20 Hz to 2 MHz. The range of the biased voltage (V) was −1 V to 0 V. All plots of real and imaginary impedances possessed single semi-circular arcs for all bias V values. The relaxation time was 2.00 μs at −1 V, and it became faster at 0 V with 0.42 μs. The equivalent circuit for the heterostructures consisted of series resistance (Rs) combined with three sets of shunt circuits of resistance (Rp) and a constant phase element (CPE), representing grain, grain boundary, and junction, respectively. The simulated Rs and Rp values decreased, while all CPE values increased as the biased V increased. For the dielectric properties, the real permittivity (ε′) values of 86.70 at 0 V and 20.22 at −1 V were disclosed at 100 Hz; all ε′ values decreased as the f value was increased. The loss tangent revealed to be very high due to dielectric loss being much higher than ε′ values, indicating the device to be leaky. The alternating conductivities plotted against f started at a low level in low f zones and grew exponentially when f reached higher values for all V values. Direct current conductivity was observed at 1.66 × 10−4 S m−1 at 0 V, which reduced to 2.67 × 10−5 S m−1 at −1 V. The dimensionless exponent of the conductivity results was higher than 1, indicating the hopping movement within the local site.

本文言語英語
論文番号106641
ジャーナルMaterials Science in Semiconductor Processing
146
DOI
出版ステータス出版済み - 8月 1 2022

!!!All Science Journal Classification (ASJC) codes

  • 材料科学一般
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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