Resistive-switching memory effects of NiO nanowire/metal junctions

Keisuke Oka; Takeshi Yanagida; Kazuki Nagashima; Tomoji Kawai; Jin Soo Kim; Bae Ho Park

doi:10.1021/ja101742f

Resistive-switching memory effects of NiO nanowire/metal junctions

Keisuke Oka
, Takeshi Yanagida
, Kazuki Nagashima
, Tomoji Kawai
, Jin Soo Kim
, Bae Ho Park

研究成果: ジャーナルへの寄稿 › 学術誌 › 査読

124 被引用数 (Scopus)

抄録

We have demonstrated the construction of highly stable resistive switching (RS) junctions with a metal/NiO nanowire/metal structure and used them to elucidate the crucial role of redox events in the nanoscale bipolar RS. The presented approaches utilizing oxide nanowire/metal junctions offer an important system and platform for investigating nanoscale RS mechanisms of various oxide materials.

本文言語	英語
ページ（範囲）	6634-6635
ページ数	2
ジャーナル	Journal of the American Chemical Society
巻	132
号	19
DOI	https://doi.org/10.1021/ja101742f
出版ステータス	出版済み - 5月 19 2010
外部発表	はい

!!!All Science Journal Classification (ASJC) codes

触媒
化学一般
生化学
コロイド化学および表面化学

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10.1021/ja101742f

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abstract = "We have demonstrated the construction of highly stable resistive switching (RS) junctions with a metal/NiO nanowire/metal structure and used them to elucidate the crucial role of redox events in the nanoscale bipolar RS. The presented approaches utilizing oxide nanowire/metal junctions offer an important system and platform for investigating nanoscale RS mechanisms of various oxide materials.",

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AU - Oka, Keisuke

AU - Yanagida, Takeshi

AU - Nagashima, Kazuki

AU - Kawai, Tomoji

AU - Kim, Jin Soo

AU - Park, Bae Ho

PY - 2010/5/19

Y1 - 2010/5/19

N2 - We have demonstrated the construction of highly stable resistive switching (RS) junctions with a metal/NiO nanowire/metal structure and used them to elucidate the crucial role of redox events in the nanoscale bipolar RS. The presented approaches utilizing oxide nanowire/metal junctions offer an important system and platform for investigating nanoscale RS mechanisms of various oxide materials.

AB - We have demonstrated the construction of highly stable resistive switching (RS) junctions with a metal/NiO nanowire/metal structure and used them to elucidate the crucial role of redox events in the nanoscale bipolar RS. The presented approaches utilizing oxide nanowire/metal junctions offer an important system and platform for investigating nanoscale RS mechanisms of various oxide materials.

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Resistive-switching memory effects of NiO nanowire/metal junctions

抄録

!!!All Science Journal Classification (ASJC) codes

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