Reliability Improvement of superluminescent diodes emitting at 1.0 μm band using InGaAsP barrier structure

T. Ohgoh, H. Asano, K. Hamamoto

研究成果: ジャーナルへの寄稿学術誌査読

3 被引用数 (Scopus)

抄録

A report is presented on the reliability evaluation of broad-band InGaAs superluminescent diodes emitting at 1.0 μm band wavelength. The devices using the InGaAsP barrier layer showed better reliability characteristics owing to the low optical power density in the active region, compared to the devices with using the GaAs barrier layer. In the lifetime test under auto-power-control mode at the output power of 30 mW at 25 °C, a noticeable degradation was observed in the devices with the GaAs barrier, while the devices with the InGaAsP barrier have shown almost no degradation over 3000 h.

本文言語英語
ページ(範囲)417-419
ページ数3
ジャーナルElectronics Letters
49
6
DOI
出版ステータス出版済み - 3月 14 2013

!!!All Science Journal Classification (ASJC) codes

  • 電子工学および電気工学

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