TY - JOUR
T1 - Relaxation process of ion irradiation defects in IV-semiconductors
AU - Murakami, Y.
AU - Miyata, M.
AU - Kenjo, A.
AU - Sadoh, T.
AU - Miyao, M.
N1 - Funding Information:
A part of this work was supported by the Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science, and Technology of Japan. We are very grateful to Dr K. Oda of the Central Research Laboratory, Hitachi Ltd., and Dr K. Satoh of the Mitsubishi Electric Corporation for offering epitaxially grown SiGe, and heavily doped Si samples, respectively, and valuable discussions.
PY - 2003/9/15
Y1 - 2003/9/15
N2 - Relaxation process of ion irradiation defects in IV-semiconductors (Si, Si0.85Ge0.15, Ge, and heavily P-doped ( ∼ 10 20 cm-3) n+-Si) was investigated. The IV-semiconductors were irradiated with 25 keV Ar+ ions (dose: 1 × 1013-1 × 1016 cm-2, dose rate: 3 × 1011-6 × 1012 cm-2 s -1, temperature: 25-250 °C). Amorphicity was comprehensively evaluated by using spectroscopic ellipsometry. For samples irradiated at temperatures around 100 °C, dose rate dependence of amorphicity was remarkably observed. The Arrhenius plot of critical dose rate, at which defect generation and annihilation rates were balanced, showed that activation energies for defect relaxation process were 0.43, 0.51, 0.88, and 0.18 eV for Si, Si0.85Ge0.15, Ge, and n+-Si, respectively. These results suggest that defect relaxation process is governed by migration of V0 in Si, Si0.85Ge0.15, and Ge, while V 2- in n+-Si. The migration energy of V0 in Si0.85Ge0.15 obeys the Vegard's law.
AB - Relaxation process of ion irradiation defects in IV-semiconductors (Si, Si0.85Ge0.15, Ge, and heavily P-doped ( ∼ 10 20 cm-3) n+-Si) was investigated. The IV-semiconductors were irradiated with 25 keV Ar+ ions (dose: 1 × 1013-1 × 1016 cm-2, dose rate: 3 × 1011-6 × 1012 cm-2 s -1, temperature: 25-250 °C). Amorphicity was comprehensively evaluated by using spectroscopic ellipsometry. For samples irradiated at temperatures around 100 °C, dose rate dependence of amorphicity was remarkably observed. The Arrhenius plot of critical dose rate, at which defect generation and annihilation rates were balanced, showed that activation energies for defect relaxation process were 0.43, 0.51, 0.88, and 0.18 eV for Si, Si0.85Ge0.15, Ge, and n+-Si, respectively. These results suggest that defect relaxation process is governed by migration of V0 in Si, Si0.85Ge0.15, and Ge, while V 2- in n+-Si. The migration energy of V0 in Si0.85Ge0.15 obeys the Vegard's law.
UR - https://www.scopus.com/pages/publications/0042011609
UR - https://www.scopus.com/pages/publications/0042011609#tab=citedBy
U2 - 10.1016/S0921-5107(02)00620-7
DO - 10.1016/S0921-5107(02)00620-7
M3 - Conference article
AN - SCOPUS:0042011609
SN - 0921-5107
VL - 102
SP - 362
EP - 365
JO - Materials Science and Engineering: B
JF - Materials Science and Engineering: B
IS - 1-3
T2 - E-MRS 2002 Symposium E
Y2 - 18 June 2002 through 21 June 2002
ER -