Pulse laser assisted MOVPE for InGaN with high indium content

In_0.53Ga_0.47N film was grown at 600°C by Nd: YAG pulse laser, assisted MOVPE. The optical and structural properties of the film were compared with that grown without laser assistance at the same condition. The results of XRD measurements showed that the crystallinity of the film grown with laser was better than that of the one grown without laser. The surface morphology and cross-sectional SEM image of the film grown with laser revealed that there were no In droplets on the film. The band-edge emission of the film grown with laser at room temperature and 77 K was observed at 840 nm. The results of micro-Raman measurement showed that the film grown with laser had better crystalline structure than that of the film grown without laser and the radiative recombination which contributed to photoluminescence mainly occurred at In_0.53Ga_0.47N region. Those results imply that pulse laser enhances the surface migration and reaction of elements in spite of low-growth temperature. We suggest that pulse laser assisted technique is effective for low-temperature growth of InGaN with high indium content.