Properties of nano-crystalline silicon films for top solar cells

Shinya Iwasita; Toshihisa Inoue; Kazunori Koga; Masaharu Shiratani; Shota Nunomura; Michio Kondo

doi:10.1109/WCPEC.2006.279809

Properties of nano-crystalline silicon films for top solar cells

Shinya Iwasita
, Toshihisa Inoue
, Kazunori Koga
, Masaharu Shiratani
, Shota Nunomura
, Michio Kondo

電子デバイス工学

研究成果: 書籍/レポートタイプへの寄稿 › 会議への寄与

抄録

Nano-crystalline Si films are deposited using multi-hollow plasma CVD. The films have a wide optical band gap of 1.75 eV and a large absorption coefficient similar to those of a-Si:H films. They also have a low initial defect density of 3×10¹⁵ cm³ and show high stability against light soaking. These results suggest that nano-crystalline Si films are promising materials for top cells.

本文言語	英語
ホスト出版物のタイトル	Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
出版社	IEEE Computer Society
ページ	1664-1667
ページ数	4
ISBN（印刷版）	1424400163, 9781424400164
DOI	https://doi.org/10.1109/WCPEC.2006.279809
出版ステータス	出版済み - 1月 1 2006
イベント	2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 - Waikoloa, HI, 米国継続期間: 5月 7 2006 → 5月 12 2006

出版物シリーズ

名前	Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
巻	2

その他

その他	2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
国/地域	米国
City	Waikoloa, HI
Period	5/7/06 → 5/12/06

UN SDG

この成果は、次の持続可能な開発目標に貢献しています

SDG 7 エネルギーをみんなに　そしてクリーンに

!!!All Science Journal Classification (ASJC) codes

再生可能エネルギー、持続可能性、環境
電子工学および電気工学
電子材料、光学材料、および磁性材料
材料化学

文献へのアクセス

10.1109/WCPEC.2006.279809

他のファイルとリンク

引用スタイル

Iwasita, S., Inoue, T., Koga, K., Shiratani, M., Nunomura, S., & Kondo, M. (2006). Properties of nano-crystalline silicon films for top solar cells. In Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 (pp. 1664-1667). 記事 4059975 (Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4; Vol. 2). IEEE Computer Society. https://doi.org/10.1109/WCPEC.2006.279809

Properties of nano-crystalline silicon films for top solar cells. / Iwasita, Shinya; Inoue, Toshihisa; Koga, Kazunori その他.
Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4. IEEE Computer Society, 2006. p. 1664-1667 4059975 (Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4; Vol. 2).

研究成果: 書籍/レポートタイプへの寄稿 › 会議への寄与

Iwasita, S, Inoue, T, Koga, K , Shiratani, M, Nunomura, S & Kondo, M 2006, Properties of nano-crystalline silicon films for top solar cells. in Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4., 4059975, Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4, vol. 2, IEEE Computer Society, pp. 1664-1667, 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4, Waikoloa, HI, 米国, 5/7/06. https://doi.org/10.1109/WCPEC.2006.279809

Iwasita S, Inoue T, Koga K , Shiratani M, Nunomura S, Kondo M. Properties of nano-crystalline silicon films for top solar cells. In Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4. IEEE Computer Society. 2006. p. 1664-1667. 4059975. (Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4). doi: 10.1109/WCPEC.2006.279809

Iwasita, Shinya ; Inoue, Toshihisa ; Koga, Kazunori その他. / Properties of nano-crystalline silicon films for top solar cells. Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4. IEEE Computer Society, 2006. pp. 1664-1667 (Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4).

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abstract = "Nano-crystalline Si films are deposited using multi-hollow plasma CVD. The films have a wide optical band gap of 1.75 eV and a large absorption coefficient similar to those of a-Si:H films. They also have a low initial defect density of 3×1015 cm3 and show high stability against light soaking. These results suggest that nano-crystalline Si films are promising materials for top cells.",

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Properties of nano-crystalline silicon films for top solar cells

抄録

出版物シリーズ

その他

UN SDG

!!!All Science Journal Classification (ASJC) codes

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