Pressure effect in sublimation growth of bulk SiC

Yasuo Kitou, Wook Bahng, Shin Ichi Nishizawa, Shigehiro Nishino, Kazuo Arai

研究成果: ジャーナルへの寄稿会議記事査読

3 被引用数 (Scopus)

抄録

The effect of growth pressure on the impurity incorporation as well as on the crystal quality was investigated in sublimation growth of a bulk SiC single crystal. The growth pressure was varied within the range of 1-100 Torr and it was found that many voids or precipitates were generated in the grown crystals and the Aluminum (Al) impurity incorporation increased during the Si-face growth when the growth pressure decreased. The pressure effect on the Al impurity incorporation with the change of step structure was discussed.

本文言語英語
ページ(範囲)I/-
ジャーナルMaterials Science Forum
338
出版ステータス出版済み - 2000
外部発表はい
イベントICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA
継続期間: 10月 10 199910月 15 1999

!!!All Science Journal Classification (ASJC) codes

  • 材料科学一般
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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