Pressure and temperature dependences of the electronic structure of CeIrSi3 probed by resonant X-ray emission spectroscopy

Hitoshi Yamaoka, Ignace Jarrige, Naohito Tsujii, Akio Kotani, Jung Fu Lin, Fuminori Honda, Rikio Settai, Yoshichika Onuki, Nozumu Hiraoka, Hirofumi Ishii, Ku Ding Tsuei

研究成果: ジャーナルへの寄稿学術誌査読

11 被引用数 (Scopus)

抄録

Pressure and temperature dependences of the electronic structure of the heavy-fermion superconductor CeIrSi3 have been investigated using partial fluorescence yield x-ray absorption spectroscopy and resonant x-ray emission spectroscopy at the Ce L3 edge. Ce is in a weakly mixed valence state at ambient pressure, mostly f1 with a small contribution from the f0 component. Pressure-induced increase of the Ce valence becomes apparent above 4 GPa, concomitantly with the disappearance of the superconductivity. No temperature dependence of the Ce valence is observed within the measured temperature range down to 24 K.

本文言語英語
論文番号124701
ジャーナルjournal of the physical society of japan
80
12
DOI
出版ステータス出版済み - 12月 2011
外部発表はい

!!!All Science Journal Classification (ASJC) codes

  • 物理学および天文学一般

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