Preparation of conductive organic-inorganic cubic perovskite thin films by dual-source vacuum vapor deposition

研究成果: ジャーナルへの寄稿学術誌査読

15 被引用数 (Scopus)

抄録

We successfully obtained conductive organic-inorganic cubic perovskite CH3NH3SnI3 thin films by vacuum vapor deposition. The vacuum-deposited thin films showed a low electrical resistivity of 8.7 × 10-4 Ω cm. Furthermore, the cubic perovskite thin films could be patterned in the shape of a shadow mask by vacuum vapor deposition. A field-effect transistor (FET) comprising a pentacene thin film as a semiconductor and the cubic perovskite thin films as source-drain electrodes was fabricated. The FET with the cubic perovskite top-contact source-drain electrodes revealed typical field-effect characteristics. The saturation-regime hole mobility, drain current on/off ratio, and threshold voltage of the FET were 0.004 cm2/(V·s), 1.2 × 103, and -7.2V, respectively.

本文言語英語
ページ(範囲)523-525
ページ数3
ジャーナルJapanese Journal of Applied Physics
45
1 B
DOI
出版ステータス出版済み - 1月 20 2006

!!!All Science Journal Classification (ASJC) codes

  • 工学一般
  • 物理学および天文学一般

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