TY - JOUR
T1 - Preparation of conductive organic-inorganic cubic perovskite thin films by dual-source vacuum vapor deposition
AU - Matsushima, Toshinori
AU - Fujita, Katsuhiko
AU - Tsutsui, Tetsuo
PY - 2006/1/20
Y1 - 2006/1/20
N2 - We successfully obtained conductive organic-inorganic cubic perovskite CH3NH3SnI3 thin films by vacuum vapor deposition. The vacuum-deposited thin films showed a low electrical resistivity of 8.7 × 10-4 Ω cm. Furthermore, the cubic perovskite thin films could be patterned in the shape of a shadow mask by vacuum vapor deposition. A field-effect transistor (FET) comprising a pentacene thin film as a semiconductor and the cubic perovskite thin films as source-drain electrodes was fabricated. The FET with the cubic perovskite top-contact source-drain electrodes revealed typical field-effect characteristics. The saturation-regime hole mobility, drain current on/off ratio, and threshold voltage of the FET were 0.004 cm2/(V·s), 1.2 × 103, and -7.2V, respectively.
AB - We successfully obtained conductive organic-inorganic cubic perovskite CH3NH3SnI3 thin films by vacuum vapor deposition. The vacuum-deposited thin films showed a low electrical resistivity of 8.7 × 10-4 Ω cm. Furthermore, the cubic perovskite thin films could be patterned in the shape of a shadow mask by vacuum vapor deposition. A field-effect transistor (FET) comprising a pentacene thin film as a semiconductor and the cubic perovskite thin films as source-drain electrodes was fabricated. The FET with the cubic perovskite top-contact source-drain electrodes revealed typical field-effect characteristics. The saturation-regime hole mobility, drain current on/off ratio, and threshold voltage of the FET were 0.004 cm2/(V·s), 1.2 × 103, and -7.2V, respectively.
UR - http://www.scopus.com/inward/record.url?scp=31844449278&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=31844449278&partnerID=8YFLogxK
U2 - 10.1143/JJAP.45.523
DO - 10.1143/JJAP.45.523
M3 - Article
AN - SCOPUS:31844449278
SN - 0021-4922
VL - 45
SP - 523
EP - 525
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 1 B
ER -