Preparation of boron carbide thin film by pulsed KrF excimer laser deposition process

Shin Ichi Aoqui, Hisatomo Miyata, Tamiko Ohshima, Tomoaki Ikegami, Kenji Ebihara

研究成果: ジャーナルへの寄稿会議記事査読

40 被引用数 (Scopus)


Pulsed laser deposition (PLD) technique has been widely used in thin film preparation because of its wonderful and excellent properties. Boron carbide (B4C) thin films are recognized to have potential for applications like hard coating and electron field emission devices. B4C is the third hardest material after diamond and cBN, with a highest hardness of HV ∼5000. Furthermore, B4C is interesting from the point of view of wear resistance and stability at high temperature. We have deposited B4C thin films by KrF excimer laser (λ = 248 nm) ablation of a stoichiometric B4C target in high vacuum. In this paper, we have prepared the B4C thin films on Si(100) substrates under various conditions, such as substrate negative DC bias voltage from between 0 to - 800 V, substrate temperatures from room temperature up to 550 °C, and laser fluence between 2 and 8 J/cm2 on the target. The typical absorption of B-C stretching bonds was detected from the infrared absorption measurement by FTIR of the deposited B4C thin films. We concluded that the hardness of the B4C thin films increases as the boron/carbon (B/C) ratio increases. The B/C ratio depends on the laser fluence. We obtained the maximum B/C ratio of 3.42 at 5 J/cm2. The hardness of that sample reached 5.84 times of that of the Si(100) substrate.

ジャーナルThin Solid Films
出版ステータス出版済み - 3月 22 2002
イベントProceedinggs of the 14th Symposium on Plasma Science for Marteri (SPSM-14) - Tokyo, 日本
継続期間: 6月 13 20016月 14 2001

!!!All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 表面および界面
  • 表面、皮膜および薄膜
  • 金属および合金
  • 材料化学


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